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GATE EC Analog Circuits questions

Practise Analog Circuits questions for GATE EC. Explore official PYQs and original subject-wise quizzes, check answers and view available solutions. Free, no sign-in.

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Official PYQ2026Analog CircuitsOp-amp CircuitsMCQ · 1 mark
The ideal OP-AMP\text{OP-AMP} circuit shown in the Figure produces output voltage Vo=xV_{o}=x when the Switch, S\text{S}, is open. Which of the options represents the output voltage when S\text{S} is closed?
Official PYQ2026Analog CircuitsOp-amp CircuitsMCQ · 2 marks
A circuit using an ideal OP-AMP\text{OP-AMP} is shown in the Figure. Which of the following options gives the correct value of the current IXI_{X}?
Official PYQ2026Analog CircuitsOp-amp CircuitsNAT · 2 marks
Consider an ideal OP-AMP circuit as shown in the Figure. The resistances R1=R2=R3=R4=50 kΩR_{1}=R_{2}=R_{3}=R_{4}=50 \mathrm{~k} \Omega. The magnitude of the closed loop gain is ____\_\_\_\_ . (rounded off to two decimal places)
Official PYQ2026Analog CircuitsDiode CircuitsNAT · 2 marks
Consider the ideal diodes D1\text{D1} and D2\text{D2} as shown in the Figure with cut-in voltage Vγ=0V_{\gamma}=0 Volt and vi(t)v_{i}(t) is in Volt. The maximum voltage (Volt) of the output vo(t)v_{o}(t) is ____\_\_\_\_ . (rounded off to two decimal places)
Official PYQ2025Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
A simplified small-signal equivalent circuit of a BJT-based amplifier is given below. The small-signal voltage gain Vo/VSV_{o} / V_{S} (in V/V)\mathrm{V} / \mathrm{V}) is ______\_\_\_\_\_\_
Official PYQ2025Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
The ideal BJT in the circuit given below is biased in the active region with a β\beta of 100100. If IBI_{B} is 10 μA10 \: \mu \mathrm{A}, then VCEV_{C E} (in Volts, rounded off to two decimal places) is ________\_\_\_\_\_\_\_\_.
Official PYQ2025Analog CircuitsOp-amp CircuitsMSQ · 1 mark
Which of the following statements is/are TRUE with respect to an ideal opamp?
Official PYQ2025Analog CircuitsBJT and MOSFET AmplifiersMSQ · 1 mark
Which of the following statements is/are TRUE with respect to ideal MOSFET-based DC-coupled single-stage amplifiers having finite load resistors?
Official PYQ2025Analog CircuitsBJT and MOSFET AmplifiersMCQ · 2 marks
The identical MOSFETs M1M_{1} and M2M_{2} in the circuit given below are ideal and biased in the saturation region. M1\mathrm{M}_{1} and M2\mathrm{M}_{2} have a transconductance gmg_{m} of 55 mS. The input signals (in Volts) are: V1=2.5+0.01sin⁡ωtV2=2.5−0.01sin⁡ωt\begin{array}{l} V_{1}=2.5+0.01 \sin \omega t \\ V_{2}=2.5-0.01 \sin \omega t \end{array} The output signal …
Official PYQ2025Analog CircuitsBJT and MOSFET AmplifiersMCQ · 2 marks
In the circuit shown, the identical transistors Q1\text{Q1} and Q2\text{Q2} are biased in the active region with β=120\beta=120. The Zener diode is in the breakdown region with VZ=5 V\mathrm{V}_{\mathrm{Z}}=5 \mathrm{~V} and IZ=25 mA\mathrm{I}_{\mathrm{Z}}=25 \mathrm{~mA}. If IL=12 mA\mathrm{I}_{\mathrm{L}}=12 \mathrm{~mA} and …
Official PYQ2025Analog CircuitsDiode CircuitsMSQ · 2 marks
All the diodes in the circuit given below are ideal. Which of the following plots is/are correct when VIV_{I} (in Volts) is swept from −M-M to MM?
Official PYQ2025Analog CircuitsDiode CircuitsNAT · 2 marks
The diode in the circuit shown below is ideal. The input voltage (in Volts) is given by VI=10sin⁡100πtV_{I}=10 \sin 100 \pi t, where time tt is in seconds. The time duration (in ms\mathrm{ms}, rounded off to two decimal places) for which the diode is forward biased during one period of the input is ____\_\_\_\_
Official PYQ2025Analog CircuitsDiode CircuitsNAT · 2 marks
An ideal p-n junction germanium diode has a reverse saturation current of 10μ A10 \mu \mathrm{~A} at 300 K300 \: \mathrm{ K}. The voltage (in Volts, rounded off to two decimal places) to be applied across the junction to get a forward bias current of 100 mA100 \: \mathrm{mA} at 300 K300 \: \mathrm{K} is _______\_\_\_\_\_\_\_. (Consider the Boltzmann constant …
Official PYQ2024Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
​​​​In the circuit below, assume that the long channel NMOS\text{NMOS} transistor is biased in saturation. The small signal trans-conductance of the transistor is gmg_{m}. Neglect body effect, channel length modulation and intrinsic device capacitances. The small signal input impedance Zin(jω)Z_{i n}(j \omega) is ______\_\_\_\_\_\_
Official PYQ2024Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
​​​​For the closed loop amplifier circuit shown below, the magnitude of open loop low frequency small signal voltage gain is 4040. All the transistors are biased in saturation. The current source ISSI_{S S} is ideal. Neglect body effect, channel length modulation and intrinsic device capacitances. The closed loop low frequency small signal voltage gain …
Official PYQ2024Analog CircuitsDiode CircuitsMCQ · 1 mark
​In the circuit shown, the n:1n: 1 step-down transformer and the diodes are ideal. The diodes have no voltage drop in forward biased condition. If the input voltage (in Volts) is Vs(t)=10sin⁡ωtV_{s}(t)=10 \sin \omega t and the average value of load voltage VL(t)V_{L}(t) (in Volts) is 2.5/π2.5 / \pi, the value of nn is _______\_\_\_\_\_\_\_.
Official PYQ2024Analog CircuitsBJT and MOSFET AmplifiersNAT · 1 mark
In the given circuit, the current IxI_{x} (in mAm A ) is ________\_\_\_\_\_\_\_\_.
Official PYQ2024Analog CircuitsOp-amp CircuitsMCQ · 2 marks
​​​​​The opamps in the circuit shown are ideal, but have saturation voltages of ±10 V\pm 10 \mathrm{~V}. Assume that the initial inductor current is 0 A0 \mathrm{~A}. The input voltage (Vi)\left(\mathrm{V}_{\mathrm{i}}\right) is a triangular signal with peak voltages of ±2 V\pm 2 \mathrm{~V} and time period of 8μs8 \mu \mathrm{s}. Which one of the following …
Official PYQ2024Analog CircuitsOp-amp CircuitsMCQ · 2 marks
In the circuit below, the opamp is ideal. If the circuit is to show sustained oscillations, the respective values of R1R_{1} and the corresponding frequency of oscillation are
Official PYQ2024Analog CircuitsBJT and MOSFET AmplifiersMSQ · 2 marks
Which of the following statements is/are true for a BJT\text{BJT} with respect to its DC current gain β\beta ?