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GATE EC question library

Practise GATE EC Electronics and Communication previous year questions free. Browse by subject, syllabus topic, year and question type, with answers and available solutions.

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20 on this page
Official PYQ2014Networks, Signals and SystemsCircuit AnalysisNAT · 1 mark
The input −3e2tu(t),-3e^{2t}u(t), where u(t)u(t) is the unit step function, is applied to a system with transfer function s−2s+3.\frac{s-2}{s+3}. If the initial value of the output is −2-2, then the value of the output at steady state is _______.
Official PYQ2014ElectromagneticsPlane Waves and PropertiesMCQ · 1 mark
The phase response of a passband waveform at the receiver is given by φ(f)=−2πα(f−fc)−2πβfc\varphi (f)= -2\pi \alpha (f-f_{c})-2\pi \beta f_{c} where fcf_{c} is the centre frequency, and α\alpha and β\beta are positive constants. The actual signal propagation delay from the transmitter to receiver is
Official PYQ2014CommunicationsAnalog CommunicationsMCQ · 1 mark
Consider an FMFM signal f(t)=cos⁡[2πfct+β1sin⁡2πf1t+β2sin⁡2πf2t].f(t)= \cos\left [ 2\pi f_{c} t+\beta _{1}\sin2\pi f_{1}t+\beta _{2}\sin2\pi f_{2}t\right ]. The maximum deviation of the instantaneous frequency from the carrier frequency fcf_{c} is
Official PYQ2014ElectromagneticsTransmission LinesNAT · 1 mark
Consider an air filled rectangular waveguide with a cross-section of 5 cm×3 cm5 \: cm \times 3 \: cm. For this waveguide, the cut-off frequency (in MHz) of TE21TE_{21} mode is __________.
Official PYQ2014ElectromagneticsTransmission LinesMCQ · 1 mark
In the following figure, the transmitter TxTx sends a wideband modulated RFRF signal via a coaxial cable to the receiver RxRx. The output impedance ZTZ_{T} of TxTx, the characteristic impedance Z0Z_{0} of the cable and the input impedance ZRZ_{R} of RxRx are all real. Which one of the following statements is TRUE about the distortion of the …
Official PYQ2014Engineering MathematicsCalculusNAT · 2 marks
The maximum value of f(x)f(x)= 2x32x^{3} – 9x29x^{2} + 12x–312x – 3 in the interval 0≤x≤30\leq x\leq 3 is _______.
Official PYQ2014Engineering MathematicsLinear AlgebraMCQ · 2 marks
Which one of the following statements is NOT true for a square matrix AA?
Official PYQ2014Engineering MathematicsProbability and StatisticsNAT · 2 marks
A fair coin is tossed repeatedly till both head and tail appear at least once. The average number of tosses required is _______ .
Official PYQ2014Engineering MathematicsProbability and StatisticsNAT · 2 marks
Let X1,X2,X_{1},X_{2}, and X3X_{3} be independent and identically distributed random variables with the uniform distribution on [0,1][0,1]. The probability P{X1+X2≤X3}P\left \{ X_{1}+X_{2}\leq X_{3}\right \} is _________.
Official PYQ2014Networks, Signals and SystemsCircuit AnalysisMCQ · 2 marks
Consider the building block called ‘Network N’ shown in the figure. Let C=100μFC= 100\mu F and R=10kΩ.R= 10 k \Omega. Two such blocks are connected in cascade, as shown in the figure. The transfer function V3(s)V1(s)\frac{V_{3}(s)}{V_{1}(s)} of the cascaded network is
Official PYQ2014Electronic DevicesMCQ · 2 marks
In the circuit shown in the figure, the value of node voltage V2V_{2} is
Official PYQ2014ElectromagneticsTransmission LinesNAT · 2 marks
In the circuit shown in the figure, the angular frequency ω\omega (in rad/s), at which the Norton equivalent impedance as seen from terminals b−b′b-b' is purely resistive, is ________.
Official PYQ2014Networks, Signals and SystemsCircuit AnalysisNAT · 2 marks
For the YY-network shown in the figure, the value of R1R_{1} (in Ω\Omega) in the equivalent Δ\Delta-network is __________.
Official PYQ2014Electronic DevicesMCQ · 2 marks
The donor and accepter impurities in an abrupt junction silicon diode are 1×1016cm−31\times 10^{16} cm^{-3} and 5×10185\times 10^{18}cm−3cm^{-3}, respectively. Assume that the intrinsic carrier concentration in silicon ni=1.5×1010cm−3n_{i}= 1.5\times 10^{10}cm^{-3} at 300K,kTq=26300K, \frac{kT}{q}= 26 mVmV and the permittivity of silicon ϵsi=1.04×10−12F/cm.\epsilon _{si}= 1.04\times 10^{-12}F/cm. …
Official PYQ2014Electronic DevicesNAT · 2 marks
The slope of the IDI_{D} vs. VGSV_{GS} curve of an n-channel MOSEFT in linear regime is 10−3Ω−110^{-3}\Omega ^{-1} at VDS=0.1 VV_{DS}= 0.1 \: V. For the same device, neglecting channel length modulation, the slope of the ID\sqrt{I_{D} } vs. VGSV_{GS} curve (in A/V\sqrt{A}/V) under saturation regime is approximately _________.
Official PYQ2014Electronic DevicesNAT · 2 marks
An ideal MOS capacitor has boron doping-concentration of 1015cm−310^{15}cm^{-3} in the substrate. When a gate voltage is applied, a depletion region of width 0.50.5 μm\mu m is formed with a surface (channel) potential of 0.20.2 VV. Given that ε0=8.854×10−14F/cm\varepsilon _{0}= 8.854\times 10^{-14}F/cm and the relative permittivities of silicon and silicon dioxide are …
Official PYQ2014Analog CircuitsBJT and MOSFET AmplifiersMCQ · 2 marks
In the circuit shown, the silicon BJT has β=50\beta = 50. Assume VBE=0.7 VV_{BE}= 0.7 \: V and VCE(sat)=0.2 VV_{CE(sat)}= 0.2 \: V. Which one of the following statements is correct?
Official PYQ2014Analog CircuitsOp-amp CircuitsMCQ · 2 marks
Assuming that the Op-amp in the circuit shown is ideal, VoV_{o} is given by
Official PYQ2014Electronic DevicesNAT · 2 marks
For the MOSFET M1M_{1} shown in the figure, assume W/L=2W/L= 2, VDD=2.0 VV_{DD}= 2.0 \: V, μnCox=100μA/V2\mu _{n}C_{ox}= 100\mu A/V^{2} and VTH=0.5 VV_{TH}= 0.5 \: V. The transistor M1M_{1} switches from saturation region to linear region when VinV_{in}(in VoltsVolts) is ____________.
Official PYQ2014Digital CircuitsSemiconductor MemoriesMCQ · 2 marks
If WL is the Word Line and BL the Bit Line, an SRAM cell is shown in