GATE EC question library
Practise GATE EC Electronics and Communication previous year questions free. Browse by subject, syllabus topic, year and question type, with answers and available solutions.
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The input where is the unit step function, is applied to a system with transfer function If the initial value of the output is , then the value of the output at steady state is _______.
The phase response of a passband waveform at the receiver is given by where is the centre frequency, and and are positive constants. The actual signal propagation delay from the transmitter to receiver is
Consider an signal The maximum deviation of the instantaneous frequency from the carrier frequency is
Consider an air filled rectangular waveguide with a cross-section of . For this waveguide, the cut-off frequency (in MHz) of mode is __________.
In the following figure, the transmitter sends a wideband modulated signal via a coaxial cable to the receiver . The output impedance of , the characteristic impedance of the cable and the input impedance of are all real. Which one of the following statements is TRUE about the distortion of the …
The maximum value of = – + in the interval is _______.
Which one of the following statements is NOT true for a square matrix ?
A fair coin is tossed repeatedly till both head and tail appear at least once. The average number of tosses required is _______ .
Let and be independent and identically distributed random variables with the uniform distribution on . The probability is _________.
Consider the building block called ‘Network N’ shown in the figure. Let and Two such blocks are connected in cascade, as shown in the figure. The transfer function of the cascaded network is
In the circuit shown in the figure, the value of node voltage is
In the circuit shown in the figure, the angular frequency (in rad/s), at which the Norton equivalent impedance as seen from terminals is purely resistive, is ________.
For the -network shown in the figure, the value of (in ) in the equivalent -network is __________.
The donor and accepter impurities in an abrupt junction silicon diode are and , respectively. Assume that the intrinsic carrier concentration in silicon at and the permittivity of silicon …
The slope of the vs. curve of an n-channel MOSEFT in linear regime is at . For the same device, neglecting channel length modulation, the slope of the vs. curve (in ) under saturation regime is approximately _________.
An ideal MOS capacitor has boron doping-concentration of in the substrate. When a gate voltage is applied, a depletion region of width is formed with a surface (channel) potential of . Given that and the relative permittivities of silicon and silicon dioxide are …
In the circuit shown, the silicon BJT has . Assume and . Which one of the following statements is correct?
Assuming that the Op-amp in the circuit shown is ideal, is given by
For the MOSFET shown in the figure, assume , , and . The transistor switches from saturation region to linear region when (in ) is ____________.
If WL is the Word Line and BL the Bit Line, an SRAM cell is shown in
