GATE EC BJT and MOSFET Amplifiers questions

An npn BJT having reverse saturation current $I_{S} = 10^{-15}\:A$ is biased in the forward active region with $V_{BE} = 700\: mV.$ The thermal voltage $(V_{T})$ is $25\: mV$ and the current gain $(β)$ may vary from $50$ to $150$ due to manufacturing variations. The maximum emitter current $(\text{in}\: \mu A)$ is ________.

In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics:$k_{n} ݇ = \mu _{n}C_{ox}(W/L) = 1\:mA/V^{2};V_{TN} = 1V.$ Assume that the channel length modulation parameter $\lambda$ is zero and body is shorted to source. The minimum supply voltage ܸ$V_{DD}$ (in volts) needed to ensure that transistor $M_{1}$ …

If fixed positive charges are present in the gate oxide of an $n$-channel enhancement type MOSFET, it will lead to

In the ac equivalent circuit shown in the figure, if $i_{in}$ is the input current and $R_{F}$ is very large, the type of feedback is

In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of $1\: V.$ Ignoring the body-effect, the output voltage at $P,Q$ and $R$ are,

A BJT is biased in forward active mode. Assume $V_{EE} = 0.7\:V, \: kT/q = 25\:mV$ and reverse saturation current $I_{S} = 10^{-13}\:A.$ The transconductance of the BJT (in $mA/V$) is __________

A depletion type $N$-channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage $V_{TH} = -0.5\:V,V_{GS} = 2.0\:V,V_{DS} = 5\:V,\:W/L = 100,C_{ox} = 10^{-8}\:F/cm^{2}$ and $\mu_{n} = 800\:cm^{2}/V$-$s.$ The value of the resistance of the voltage controlled resistor (in $\Omega)$ is _______.

For the amplifier shown in the figure, the BJT parameters are $V_{BE} = 0.7\:V, \beta = 200,$ and thermal voltage $V_{T} = 25\:mV.$ The voltage gain $(v_{0}/v_{i})$ of the amplifier is ______.

An increase in the base recombination of a BJT will increase

The feedback topology in the amplifier circuit ( the base bias circuit is not shown for simplicity) in the figure is

In the differential amplifier shown in the figure, the magnitude of the common-mode and differential-mode gains are $A_{CM}$ and $A_{d},$ respectively. If the resistance $R_{E}$ is increased, then

For the MOSFETs shown in the figure, the threshold voltage $\mid V_{t} \mid= 2$ V and $K= \frac{1}{2}\mu C_{ox} ( \frac{W}{L} ) = 0.1 \: mA/V^{2}$. The value of $I_{D}$ (in mA) is _______________ .

The desirable characteristics of a transconductance amplifier are

In the circuit shown, the silicon BJT has $\beta = 50$. Assume $V_{BE}= 0.7 \: V$ and $V_{CE(sat)}= 0.2 \: V$. Which one of the following statements is correct?

Consider two BJTs biased at the same collector current with area $A_1=0.2 \mu m \times 0.2 \mu m$ and $A_2 = 300 \mu m \times 300 \mu m$. Assuming that all other device parameters are identical, $kT/q=26 \: mV$, the intrinsic carrier concentration is $1 \times 10^{10} cm^{-3}$, and $q=1.6 \times 10^{-19} \:C$, the difference between the …

Consider the common-collector amplifier in the figure (bias circuitry ensures that the transistor operates in forward active region, but has been omitted for simplicity). Let $I_C$ be the collector current, $V_{BE}$ be the base-emitter voltage and $V_T$ be the thermal voltage. Also, $g_m$ and $r_0$ are the small-signal transconductance and output …

A BJT in a common-base configuration is used to amplify a signal received by a $50 \Omega$ antenna. Assume $kT/q=25 \: mV$. The value of the collector bias current (in mA) required to match the input impedance of the amplifier to the impedance of the antenna is __________.

For the common collector amplifier shown in the figure, the BJT has high $\beta$, negligible $V_{CE(sat)}$, and $V_{BE}=0.7 \: V$. The maximum undistorted peak-to-peak output voltage $v_o$ (in Volts) is __________

The voltage gain $A_v$ of the circuit shown below is

In the three dimensional view of a silicon n-channel MOS transistor shown below, $\delta=20\:nm$. The transistor is of width $1\: \mu m$. The depletion width formed at every p-n junction is $10\:nm$. The relative permittivities of $Si$ and $SiO_2$, respectively, are $11.7$ and $3.9$, and $\varepsilon_0=8.9 \times 10^{-12} \: F/m$. The …