GATE EC Electronic Devices questions

In the figure shown, the value of the current $I$ (in Amperes) is __________.

In MOSFET fabrication, the channel length is defined during the process of

A thin $P$-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to

At $T= 300 \: K$, the hole mobility of a semiconductor $\mu _{p}= 500$ $cm^{2}$$/V-s$ and $\frac{kT}{q}= 26$ $mV$. The hole diffusion constant $D_{p}$ in $cm^{2}$$/s$ is _________

In the circuit shown, the $PNP$ transistor has $\mid V_{BE} \mid = 0.7 \:V$ and $\beta = 50$. Assume that $R_{B}= 100 \: k \Omega$. For $V_{0}$ to be $5 \: V$, the value of $R_{C}$ (in $k \Omega$) is ________

In the circuit shown in the figure, the value of node voltage $V_{2}$ is

The donor and accepter impurities in an abrupt junction silicon diode are $1\times 10^{16} cm^{-3}$ and $5\times 10^{18}$$cm^{-3}$, respectively. Assume that the intrinsic carrier concentration in silicon $n_{i}= 1.5\times 10^{10}cm^{-3}$ at $300K, \frac{kT}{q}= 26$ $mV$ and the permittivity of silicon $\epsilon _{si}= 1.04\times 10^{-12}F/cm.$ …

The slope of the $I_{D}$ vs. $V_{GS}$ curve of an n-channel MOSEFT in linear regime is $10^{-3}\Omega ^{-1}$ at $V_{DS}= 0.1 \: V$. For the same device, neglecting channel length modulation, the slope of the $\sqrt{I_{D} }$ vs. $V_{GS}$ curve (in $\sqrt{A}/V$) under saturation regime is approximately _________.

An ideal MOS capacitor has boron doping-concentration of $10^{15}cm^{-3}$ in the substrate. When a gate voltage is applied, a depletion region of width $0.5$ $\mu m$ is formed with a surface (channel) potential of $0.2$ $V$. Given that $\varepsilon _{0}= 8.854\times 10^{-14}F/cm$ and the relative permittivities of silicon and silicon dioxide are …

For the MOSFET $M_{1}$ shown in the figure, assume $W/L= 2$, $V_{DD}= 2.0 \: V$, $\mu _{n}C_{ox}= 100\mu A/V^{2}$ and $V_{TH}= 0.5 \: V$. The transistor $M_{1}$ switches from saturation region to linear region when $V_{in}$(in $Volts$) is ____________.

The magnitude of current (in mA) through the resistor $R_2$ in the figure shown is __________

In the figure, $\text{ln }(\rho _i)$ is plotted as a function of $1/T$, where $\rho_i$ is the intrinsic resistivity of silicon, $T$ is the temperature, and the plot is almost linear. The slope of the line can be used to estimate

The cut-off wavelength (in $\mu m$) of light that can be used for intrinsic excitation of a semiconductor material of bandgap $E_g = 1.1 \: eV$ is ______________

Two silicon diodes, with a forward voltage drop of $0.7 \: V$, are used in the circuit shown in the figure. The range of input voltage $V_i$ for which the output voltage $V_o=V_i$, is

Consider a silicon sample doped with $N_D = 1 \times 10^{15}/cm^3$ donor atoms. Assume that the intrinsic carrier concentration $n_i = 1.5 \times 10^{10}/cm^3$. If the sample is additionally doped with $N_A = 1 \times 10^{18}/cm^3$ acceptor atoms, the approximate number of electrons$/cm^3$ in the sample, at $T=300 \:K$, will be ________.

A bulb in a staircase has two switches, one switch being at the ground floor and the other one at the first floor. The bulb can be turned ON and also can be turned OFF by any one of the switches irrespective of the state of the other switch. The logic of switching of the bulb resembles

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

In the circuit shown below what is the output voltage $(V_{\text{out}})$ if a silicon transistor $Q$ and an ideal op-amp are used?

In a MOSFET operating in the saturation region, the channel length modulation effect causes

The return loss of a device is found to be $20\:dB.$ The voltage standing wave ratio (VSWR) and magnitude of reflection coefficient are respectively