GATE EC Analog Circuits questions

In the circuit shown, assume that the opamp is ideal. If the gain $(v_{0} / v_{in})$ is $–12,$ the value of $R\: (\text{in}\: k\Omega)$ is _____.

In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics:$k_{n} ݇ = \mu _{n}C_{ox}(W/L) = 1\:mA/V^{2};V_{TN} = 1V.$ Assume that the channel length modulation parameter $\lambda$ is zero and body is shorted to source. The minimum supply voltage ܸ$V_{DD}$ (in volts) needed to ensure that transistor $M_{1}$ …

In the circuit shown, assume that the diodes $D1$ and $D2$ are ideal. The average value of voltage $V_{ab}\: (\text{in Volts}),$ across terminals $‘a’$ and $‘b’$ is _________.

If fixed positive charges are present in the gate oxide of an $n$-channel enhancement type MOSFET, it will lead to

In the ac equivalent circuit shown in the figure, if $i_{in}$ is the input current and $R_{F}$ is very large, the type of feedback is

In the low-pass filter shown in the figure, for a cut-off frequency of $5\:kHz,$ the value of $R_{2}\:(\text{in}\:k\Omega)$ is ______.

In the following circuit employing pass transistor logic, all NMOS transistors are identical with a threshold voltage of $1\: V.$ Ignoring the body-effect, the output voltage at $P,Q$ and $R$ are,

A periodic variable $x$ is shown in the figure as a function of time. The root-mean-square (rms) value of $x$ is _______.

A BJT is biased in forward active mode. Assume $V_{EE} = 0.7\:V, \: kT/q = 25\:mV$ and reverse saturation current $I_{S} = 10^{-13}\:A.$ The transconductance of the BJT (in $mA/V$) is __________

A depletion type $N$-channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage $V_{TH} = -0.5\:V,V_{GS} = 2.0\:V,V_{DS} = 5\:V,\:W/L = 100,C_{ox} = 10^{-8}\:F/cm^{2}$ and $\mu_{n} = 800\:cm^{2}/V$-$s.$ The value of the resistance of the voltage controlled resistor (in $\Omega)$ is _______.

In the voltage regulator circuit shown in the figure, the op-amp is ideal. The BJT has $V_{BE} = 0.7\:V$ and $\beta = 100,$ and the zener voltage is $4.7\:V.$ For a regulated output of $9\:V,$ the value of $R$ (in $\Omega)$ is ______.

In the circuit shown the op-amp has finite input impedance, infinite voltage gain, and zero input offset voltage. The output voltage $V_{out}$ is

For the amplifier shown in the figure, the BJT parameters are $V_{BE} = 0.7\:V, \beta = 200,$ and thermal voltage $V_{T} = 25\:mV.$ The voltage gain $(v_{0}/v_{i})$ of the amplifier is ______.

An increase in the base recombination of a BJT will increase

The feedback topology in the amplifier circuit ( the base bias circuit is not shown for simplicity) in the figure is

In the differential amplifier shown in the figure, the magnitude of the common-mode and differential-mode gains are $A_{CM}$ and $A_{d},$ respectively. If the resistance $R_{E}$ is increased, then

The diode in the circuit shown has $V_{on}$$= 0.7$ Volts but is ideal otherwise. If $V_{i}= 5 \sin ( \omega t )$Volts, the minimum and maximum values of $V_{o}$ (in Volts ) are, respectively,

For the MOSFETs shown in the figure, the threshold voltage $\mid V_{t} \mid= 2$ V and $K= \frac{1}{2}\mu C_{ox} ( \frac{W}{L} ) = 0.1 \: mA/V^{2}$. The value of $I_{D}$ (in mA) is _______________ .

The desirable characteristics of a transconductance amplifier are

The figure shows a half-wave rectifier. The diode $D$ is ideal. The average steady-state current (in Amperes) through the diode is approximately ___________.