GATE EC question library
Practise GATE EC Electronics and Communication previous year questions free. Browse by subject, syllabus topic, year and question type, with answers and available solutions.
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A connection is made consisting of resistance A in series with a parallel combination of resistances and . Three resistors of value are provided. Consider all possible permutations of the given resistors into the positions , and identify the configurations with maximum possible overall resistance, and also the ones …
An LTI system with unit sample response is a
The input and the output of a continuous –time system are related as The system is
An n-channel enhancement mode MOSFET is biased at > and > , where is the gate-to-source voltage, is the drain-to-source voltage and is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a
An bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then
Consider an -channel MOSFET having width , length , electron mobility in the channel and oxide capacitance per unit area . If gate-to-source V, drain-to-source voltage , , threshold voltage and , then the transconductance …
The output of the diode circuit shown in the figure is connected to an averaging DC voltmeter. The reading on the DC voltmeter in Volts, neglecting the voltage drop across the diode, is _________________.
In the figure, is a real silicon junction diode with a drop of under forward bias condition and is a Zener diode breakdown voltage of . The input is a periodic square wave of period , whose one period is shown in the figure. Assuming , where is the time constant of the …
Consider the circuit shown in the figure. Assume base-to-emitter voltage and common-base current gain () of the transistor is unity. The value of the collector-to-emitter voltage (in volt) is ____________
For the circuit shown in the figure, P and Q are the inputs and Y is the output. The logic implemented by the circuit is
Consider the circuit shown in the figure. The Boolean expression implemented by the circuit is
In a DRAM,
For the system shown in the figure, = ___________
Consider the state space realization , with the initial condition , where …
Which of the following statements is incorrect?
Which one of the following graphs shows the Shannon capacity (channel capacity) in bits of a memoryless binary symmetric channel with crossover probability ?
Consider the random process Where is a zero-mean Gaussian random variable and V is a random variable uniformly distributed between and . Assume that and are statistically independent. The mean value of the random process at is ________
A sinusoidal message signal is converted to a PCM signal using a uniform quantizer. The required signal-to-quantization noise ratio (SQNR) at the output of the quantizer is dB. The minimum number of bits per sample needed to achieve the desired SQNR is __________
Two conducting spheres and of radii and () respectively, are placed far apart and connected by a long, thin conducting wire, as shown in the figure. For some charge placed on this structure, the potential and surface electric field on are and and that on S2 are and , respectively. …
A two-wire transmission line terminates in a television set. The VSWR measured on the line is . The percentage of power that is reflected from the television set is _________
