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GATE EC question library

Practise GATE EC Electronics and Communication previous year questions free. Browse by subject, syllabus topic, year and question type, with answers and available solutions.

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20 on this page
Official PYQ2017Networks, Signals and SystemsCircuit AnalysisNAT · 1 mark
A connection is made consisting of resistance A in series with a parallel combination of resistances BB and CC. Three resistors of value 10Ω,5Ω,2Ω10 Ω, 5 Ω, 2 Ω are provided. Consider all possible permutations of the given resistors into the positions A,B,CA, B, C, and identify the configurations with maximum possible overall resistance, and also the ones …
Official PYQ2017Networks, Signals and SystemsLTI SystemsMCQ · 1 mark
An LTI system with unit sample response h[n]=5δ[n]−7δ[n−1]+7δ[n−3]−5δ[n−4]h[n]=5\delta [n]-7\delta [n-1]+7\delta [n-3]-5\delta [n-4] is a
Official PYQ2017Networks, Signals and SystemsLTI SystemsMCQ · 1 mark
The input x(t)x(t) and the output y(t)y(t) of a continuous –time system are related as y(t)=∫t−Ttx(u)du.y(t)=\int_{t-T}^{t}x(u) du. The system is
Official PYQ2017Electronic DevicesMCQ · 1 mark
An n-channel enhancement mode MOSFET is biased at VGSV_{GS} >VTHV_{TH} and VDSV_{DS} > (VGS−VTH)(V_{GS}-V_{TH}), where VGSV_{GS} is the gate-to-source voltage, VDSV_{DS} is the drain-to-source voltage and VTHV_{TH} is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a
Official PYQ2017Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
An npnnpn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then
Official PYQ2017Electronic DevicesNAT · 1 mark
Consider an nn-channel MOSFET having width WW, length LL, electron mobility in the channel μn\mu _{n} and oxide capacitance per unit area CoxC_{ox}. If gate-to-source VGS=0.7V_{GS}=0.7 V, drain-to-source voltage VDS=0.1VV_{DS}=0.1 V, μnCox=100μA/V2\mu _{n}C_{ox}=100 \mu A/V^{2}, threshold voltage VTH=0.3VV_{TH}=0.3V and (W/L)=50(W/L)=50, then the transconductance …
Official PYQ2017Analog CircuitsDiode CircuitsNAT · 1 mark
The output V0V_0 of the diode circuit shown in the figure is connected to an averaging DC voltmeter. The reading on the DC voltmeter in Volts, neglecting the voltage drop across the diode, is _________________.
Official PYQ2017Electronic DevicesMCQ · 1 mark
In the figure, D1D1 is a real silicon pnpn junction diode with a drop of 0.7V0.7V under forward bias condition and D2D2 is a Zener diode breakdown voltage of −6.8V-6.8V. The input Vin(t)V_{in}(t) is a periodic square wave of period TT, whose one period is shown in the figure. Assuming 10τ<<T10 \tau < < T, where τ\tau is the time constant of the …
Official PYQ2017Analog CircuitsBJT and MOSFET AmplifiersNAT · 1 mark
Consider the circuit shown in the figure. Assume base-to-emitter voltage VBE=0.8VV_{BE}=0.8 V and common-base current gain (α\alpha) of the transistor is unity. The value of the collector-to-emitter voltage VCEV_{CE} (in volt) is ____________
Official PYQ2017Digital CircuitsCombinatorial CircuitsMCQ · 1 mark
For the circuit shown in the figure, P and Q are the inputs and Y is the output. The logic implemented by the circuit is
Official PYQ2017Digital CircuitsCombinatorial CircuitsMCQ · 1 mark
Consider the circuit shown in the figure. The Boolean expression FF implemented by the circuit is
Official PYQ2017Digital CircuitsSemiconductor MemoriesMCQ · 1 mark
In a DRAM,
Official PYQ2017Control SystemsNAT · 1 mark
For the system shown in the figure, Y(s)/X(s)Y(s)/X(s) = ___________
Official PYQ2017Networks, Signals and SystemsCircuit AnalysisNAT · 1 mark
Consider the state space realization [x1˙(t)x2˙(t)]=[000−9][x1(t)x2(t)]+[045]u(t)\begin{bmatrix} \dot{x_1}(t)\\ \dot{x_2}(t) \end{bmatrix}=\begin{bmatrix} 0 &0 \\ 0&-9 \end{bmatrix}\begin{bmatrix} x_1(t)\\ x_2(t) \end{bmatrix}+\begin{bmatrix} 0\\ 45 \end{bmatrix} u(t) , with the initial condition [x1(0)x2(0)]=[00]\begin{bmatrix} x_1(0)\\ x_2(0) \end{bmatrix}=\begin{bmatrix} 0\\ 0 \end{bmatrix} , where …
Official PYQ2017Control SystemsMCQ · 1 mark
Which of the following statements is incorrect?
Official PYQ2017CommunicationsInformation TheoryMCQ · 1 mark
Which one of the following graphs shows the Shannon capacity (channel capacity) in bits of a memoryless binary symmetric channel with crossover probability pp ?
Official PYQ2017Engineering MathematicsProbability and StatisticsNAT · 1 mark
Consider the random process X(t)=U+Vt,X(t)=U+Vt, Where UU is a zero-mean Gaussian random variable and V is a random variable uniformly distributed between 00 and 22. Assume that UU and VV are statistically independent. The mean value of the random process at t=2t = 2 is ________
Official PYQ2017CommunicationsDigital CommunicationsNAT · 1 mark
A sinusoidal message signal is converted to a PCM signal using a uniform quantizer. The required signal-to-quantization noise ratio (SQNR) at the output of the quantizer is 4040 dB. The minimum number of bits per sample needed to achieve the desired SQNR is __________
Official PYQ2017ElectromagneticsMaxwell's EquationsMCQ · 1 mark
Two conducting spheres S1S1 and S2S2 of radii aa and bb (b>ab>a) respectively, are placed far apart and connected by a long, thin conducting wire, as shown in the figure. For some charge placed on this structure, the potential and surface electric field on S1S1 are VaV_a and EaE_a and that on S2 are VbV_b and EbE_b, respectively. …
Official PYQ2017ElectromagneticsTransmission LinesNAT · 1 mark
A two-wire transmission line terminates in a television set. The VSWR measured on the line is 5.85.8. The percentage of power that is reflected from the television set is _________