GATE EC 2017 Set 2 Q9 — Electronic Devices

An n-channel enhancement mode MOSFET is biased at $V_{GS}$  >$V_{TH}$  and $V_{DS}$ > $(V_{GS}-V_{TH})$, where $V_{GS}$ is the gate-to-source voltage, $V_{DS}$ is the drain-to-source voltage and $V_{TH}$ is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a