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GATE EC question library

Practise GATE EC Electronics and Communication previous year questions free. Browse by subject, syllabus topic, year and question type, with answers and available solutions.

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20 on this page
Official PYQ2005Networks, Signals and SystemsLTI SystemsMCQ · 1 mark
A signal as shown in the figure is applied to a matched filter. Which of the following does represent the output of this matched filter?
Official PYQ2005CommunicationsRandom ProcessesMCQ · 1 mark
Noise with uniform power spectral density of N0\text{N}_{0} W/Hz\mathrm{W / Hz} is passed through a filter H(ω)=2\mathrm{H}(\omega)=2 exp (−jωtd)\left(-j \omega t_{d}\right) followed by an ideal low pass filter of bandwidth B Hz.\text{B Hz.} The output noise power in Watts is
Official PYQ2005CommunicationsAnalog CommunicationsMCQ · 1 mark
A carrier is phase modulated (PM) with frequency deviation of 10  kHz10 \; \mathrm{kHz} by a single tone frequency of 1  kHz1 \; \mathrm{kHz}. If the single tone frequency is increased to 2  kHz2 \; \mathrm{kHz}, assuming that phase deviation remains unchanged, the bandwidth of the PM signal is
Official PYQ2005Engineering MathematicsProbability and StatisticsMCQ · 1 mark
An output of a communication channel is a random variable vv with the probability density function as shown in the figure The mean square value of vv is
Official PYQ2005ElectromagneticsTransmission LinesMCQ · 1 mark
Characteristic impedance of a transmission line is 50Ω50 \Omega. Input impedance of the open-circuited line is Za−=100+j150ΩZ_{a^{-}}=100+j 150 \Omega. When the transmission line is short- circuited, then value of the input impedance will be
Official PYQ2005Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
Common Data Questions 78, 79, 80 Given, rd=20  kΩ,IDSS=10 mA, Vp=−8 Vr_{d}=20 \; \mathrm{k} \Omega, \mathrm{I}_{\mathrm{DSS}}=10 \mathrm{~mA}, \mathrm{~V}_{p}=-8 \mathrm{~V} Z1Z_1 and Z0Z_0 of the circuit are respectively
Official PYQ2005Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
Common Data Questions 78, 79, 80 Given, rd=20  kΩ,IDSS=10 mA, Vp=−8 Vr_{d}=20 \; \mathrm{k} \Omega, \mathrm{I}_{\mathrm{DSS}}=10 \mathrm{~mA}, \mathrm{~V}_{p}=-8 \mathrm{~V} ID\mathrm{I}_{\mathrm{D}} and VDS\mathrm{V}_{\mathrm{DS}} under DC\mathrm{DC} conditions are respectively
Official PYQ2005Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
Common Data Questions 78, 79, 80 Given, rd=20  kΩ,IDSS=10 mA, Vp=−8 Vr_{d}=20 \; \mathrm{k} \Omega, \mathrm{I}_{\mathrm{DSS}}=10 \mathrm{~mA}, \mathrm{~V}_{p}=-8 \mathrm{~V} Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively
Official PYQ2005Digital CircuitsComputer OrganizationMCQ · 1 mark
Statement for Linked Answer Questions 81 a and 81 b: Consider an 80858085 microprocessor system The following program starts at location 0100H0100 \mathrm{H}. LXI SP, 00FFLXI H, 0701MVI A, 20HSUB M\begin{array}{l} \text{LXI SP, 00FF} \\ \text{LXI H, 0701} \\ \text{MVI A, 20H} \\ \text{SUB M} \end{array} The content of accumulator when the program counter reaches 0109H0109 \mathrm{H} is
Official PYQ2005Control SystemsMCQ · 1 mark
Statement for Linked Answer Questions 82a and 82b: The dopen loop transfer function of a unity feedback system is given by G(s)=3e−2s(s+2)\mathrm{G}(s)=\frac{3 e^{-2}}{s(s+2)} The gain and phase crossover frequencies in rad/sec\mathrm{rad} / \mathrm{sec} are, respectively
Official PYQ2005Digital CircuitsData ConvertersMCQ · 1 mark
Statement for Linked Answer Questions 83a and 83b: Asymmetric three-level midtread quantizer is to be designed assuming equiprobable occurence of all quantization levels. If the probability density function is divided into three regions as shown in the figure, the value of a in the figure is
Official PYQ2005ElectromagneticsTransmission LinesMCQ · 1 mark
Statement of Linked Answer Questions 84a and 84b: Voltage standing wave pattern in a lossless transmission line with characteristic impedance 50 W50 \mathrm{~W} and a resistive load is shown in the figure. The value of the load resistance is
Official PYQ2004Networks, Signals and SystemsCircuit AnalysisMCQ · 1 mark
The equivalent inductance measured between the terminals 11 and 22 for the circuit shown in the figure is
Official PYQ2004Networks, Signals and SystemsCircuit AnalysisMCQ · 1 mark
The circuit shown in in the figure, with R=13ΩR=\frac{1}{3} \Omega, L=14H,C=3 F\mathrm{L}=\frac{1}{4} \mathrm{H}, \mathrm{C}=3 \mathrm{~F} has input voltage v(t)=sin⁡2tv(t)=\sin 2 t. The resulting current i(t)i(t) is
Official PYQ2004Networks, Signals and SystemsCircuit AnalysisMCQ · 1 mark
For the circuit shown in in the figure, the time constant RC=1 ms\text{RC}=1 \mathrm{~ms}. The input voltage is vi(t)=2v_{i}(t)=\sqrt{2} sin⁡103t\sin 10^{3} t. The output voltage v0(t)v_{0}(t) is equal to
Official PYQ2004Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
The impurity commonly used for realizing the base region of a silicon n−p−nn-p-n transistor is
Official PYQ2004Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
If for a silicon n−p−nn-p-n transistor, the base-to-emitter voltage (VKE)\left(\mathrm{V}_{\mathrm{KE}}\right) is 0.7 V0.7 \mathrm{~V} and the collector-to-base voltage (VCB)\left(\mathrm{V}_{\text{CB}}\right) is 0.2 V0.2 \mathrm{~V}, then the transistor is operating in the
Official PYQ2004Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
Consider the following statements S1\mathrm{S} 1 and S2\mathrm{S} 2. S1 :\text{S1 :} The β\beta of a bipolar transistor reduces if the base width is increased. S2 :\text{S2 :} The β\beta of a bipolar transistor increases if the doping concentration in the base is increased. Which one of the following is correct?
Official PYQ2004Analog CircuitsOp-amp CircuitsMCQ · 1 mark
An ideal op-amp\text{op-amp} is an ideal
Official PYQ2004Analog CircuitsOp-amp CircuitsMCQ · 1 mark
Voltage series feedback (also called series-shunt feedback) results in