GATE EC Semiconductor Memories questions

In the circuit shown, $A$ and $B$ are the inputs and $F$ is the output. What is the functionality of the circuit?

In a DRAM,

An $8$ Kbyte ROM with an active low Chip Select input $\left (\overline{CS}\right )$ is to be used in an $8085$ microprocessor based system. The ROM should occupy the address range $1000H$ to $2FFFH$. The address lines are designated as $A_{15}$ to $A_{0}$, where $A_{15}$ is the most significant address bit. Which one of the following logic …

If WL is the Word Line and BL the Bit Line, an SRAM cell is shown in

In the circuit shown in the figure $\mathrm{A}$ is a parallel-in, parallel-out $4$ bit register, which loads at the rising edge of the clock $C$. The input lines are connected to a $4$ bit bus, $W.$ Its output acts as the input to a $16 \times 4$ ROM whose output is floating when the enable input $E$ is $0.$ A partial table of the contents of …

Each cell of a Static Random Access Memory contains

A memory system of size $26 \mathrm{~K}$ bytes is required to be designed using memory chips which have $12$ address lines and $4$ data lines each. The number of such chips required to design the memory system is

A dynamic $\text{RAM}$ cell which hold $5 \mathrm{~V}$ has to be refreshed every $20 \mathrm{~m}$ secs, so that the stored voltage does not fall by more than $0.5 \mathrm{~V}$. If the cell has a constant discharge current of $0.1 \; \mathrm{pA}$, the storage capacitance of the cell is

The minimum number of $\text{MOS}$ transistors required to make a dynamic $\text{RAM}$ cell is

A dynamic $\text{RAM}$ consists of

Choose the correct statement(s) from the following