GATE EC BJT and MOSFET Amplifiers questions

The $f_{\mathrm{T}}$ of a $\text{BJT}$ is related to its $g m, \mathrm{C}_\pi$ and $\mathrm{C}_\mu$ as follows

The threshold voltage for each transistor in the figure is $2 \mathrm{V}$. For this circuit to work as an inverter, $V_{i}$ must take the values

In a common emitter $\text{BJT}$ amplifier, the maximum usable supply voltage is limited by

A cascade amplifier stage is equivalent to

In the $\text{BJT}$ amplifier shown in the figure is the transistor is based in the forward active region. Putting a capacitor across $R_E$ will

A $n$ – channel silicon $\left(E_{g}=1.1 \; \mathrm{eV}\right)$ MOSFET was fabricated using $n+$ poly-silicon gate and the threshold voltage was found to be $1 \mathrm{~V}$. Now, if the gate is changed to $v^{+}$poly-silicon, other things remaining the same, the new threshold voltage should be

The common-emitter short-circuit current gain $\beta$ of a transistor

If a transistor is operating with both of its junctions forward biased, but with the collector base forward bias greater than the emitter-base forward bias, then it is operating in the

A Darlington stage is shown in the figure is. If the transconductance of $Q_{1}$ is $g_{m 1}$ and $Q_{2}$ is $g_{m 2}$, then the overall transconductance $g_{m c}\left[\triangleq \frac{i_{c}^{c}}{v_{b c}^{c}}\right]$ is given by

A silicon $n$ $\text{MOSFET}$ has a threshold voltage of $1$ $\mathrm{V}$ and oxide thickness of $\mathrm{AO}$. $\left[\varepsilon_{r}\left(\mathrm{siO}_{2}\right)=3.9, \varepsilon_{\mathrm{o}}=8.854 \times 10^{-14} \mathrm{~F} / \mathrm{cm}\right.$, $\left.q=1.6 \times 10^{-19} \mathrm{C}\right]$ The region under the gate is ion-implanted for …

An $\text{npn}$ transistor has a beta cut-off frequency $f \beta$ of $1 \; \mathrm{MHz}$, and common emitter short circuit low frequency current gain $\beta \mathrm{O}$ of $200$. It unity gain frequency $f \mathrm{T}$ and the alpha cut-off frequency $f \alpha$ respectively are

In a bipolar transistor at room temperature, if the emitter current is doubled the voltage across its base-emitter junction

The Ebers-Moll model is applicable to

A change in the value of the emitter resistance, $\mathrm{R}_{\mathrm{e}^{\prime}}$ in a difference amplifier

A $\text{BJT}$ is said to be operating in the saturation region if

The break down voltage of a transistor with its base open is $\mathrm{BV}_{\mathrm{CEO}}$ and that with emitter open is $\mathrm{BV}_{\mathrm{CBO}^{‘}}$ then

A class - A transformer coupled, transistor power amplifier is required to deliver a power output of $10$ watts. The maximum power rating of the transistor should not be less than

The threshold voltage of an $n$ channel $\text{MOSFET}$ can be increased by

In a transistor push-pull amplifier

The bandwidth of an $n$-stage tuned amplifier, with each stage having a band width of $B$, is given by