Official PYQ · 1996Set 1 · Q1.8BJT and MOSFET AmplifiersMCQ1 mark

GATE EC 1996 Set 1 Q1.8 — BJT and MOSFET Amplifiers

A $n$ – channel silicon $\left(E_{g}=1.1 \; \mathrm{eV}\right)$ MOSFET was fabricated using $n+$ poly-silicon gate and the threshold voltage was found to be $1 \mathrm{~V}$ . Now, if the gate is changed to $v^{+}$ poly-silicon, other things remaining the same, the new threshold voltage should be

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Published 10 Oct 2026

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GATE EC 1996 Set 1 Q1.8 — BJT and MOSFET Amplifiers

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