GATE EC Analog Circuits questions

In the circuit shown, $I_1=80$ mA and $I_2=4$ mA. Transistors $T_1$ and $T_2$ are identical. Assume that the thermal voltage $V_T$ is $26$ mV at $27^{\circ}C$. At $50^{\circ}C$, the value of the voltage $V_{12}=V_1 - V_2$ (in mV) is _______.

The $2$-port admittance matrix of the circuit shown is given by

If the circuit shown has to function as a clamping circuit, then which one of the following conditions should be satisfied for the sinusoidal signal of period $T?$

In the circuit shown, $V_{0} = V_{0A}$ for switch $SW$ in position $A$ and $V_{0} = V_{0B}$ for $SW$ in position $B$. Assume that the opamp is ideal. The value of $\dfrac{V_{0B}}{V_{0A}}$ is ___________.

In the bistable circuit shown, the ideal opamp has saturation levels of $\pm\: 5\: V.$ The value of $R_{1} \text{(in}\: k\Omega)$ that gives a hysteresis width of $500\: mV$ is ________.

An $LC$ tank circuit consists of an ideal capacitor $C$ connected in parallel with a coil of inductance $L$ having an internal resistance $R.$ The resonant frequency of the tank circuit is

The diode in the circuit given below has $V_{ON} = 0.7\:V$ but is ideal otherwise. The current $(\text{in}\: mA)$ in the $4\: k\Omega$ resistor is _______.

Assuming that the opamp in the circuit shown below is ideal, the output voltage ܸ$V_{o}$ (in volts) is________.

For the voltage regulator circuit shown, the input voltage $(V_{in})$ is $20 V \pm 20\%$ and the regulated output voltage $(V_{out})$ is $10\: V.$ Assume the opamp to be ideal. For a load $R_L$ drawing $200\: mA,$ the maximum power dissipation in $Q_{1}\:\text{(in Watts)}$ is ________.

In the ac equivalent circuit shown, the two BJTs are biased in active region and have identical parameters with $\beta \gg 1$. The open circuit small signal voltage gain is approximately _______.

In the circuit shown, the voltage $V_{X}$ (in Volts) is ________.

At very high frequencies, the peak output voltage $V_{0}$ (in Volts) is _______.

Which one of the following processes is preferred to form the gate dielectric $(SiO_{2})$ of MOSFETs ?

If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?

In the circuit shown in the figure, the BJT has a current gain $(\beta)$ of $50.$ For an emitter-base voltage ܸ $V_{EB} = 600\: mV,$ the emitter-collector voltage $V_{EC}$ (in Volts) is _______.

In the circuit shown using an ideal opamp, the $3$-dB cut-off frequency (in Hz) is _______.

In the circuit shown, assume that diodes $D_{1}$ and $D_{2}$ are ideal. In the steady state condition, the average voltage $V_{ab}$ (in Volts) across the $0.5\: \mu F$ capacitor is ______.

Consider a four-point moving average filter defined by the equation $y[n] = \displaystyle{}\sum _{i=0}^{3}\alpha_{i}\:x[n-i].$ The condition on the filter coefficients that results in a null at zero frequency is

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be $1\: mA$ at a drain-source voltage of $5\: V.$ When the drain-source voltage was increased to $6\: V$ while keeping gate-source voltage same, the drain current increased to $1.02\: mA.$ Assume that drain to source saturation voltage is much smaller than …

An npn BJT having reverse saturation current $I_{S} = 10^{-15}\:A$ is biased in the forward active region with $V_{BE} = 700\: mV.$ The thermal voltage $(V_{T})$ is $25\: mV$ and the current gain $(β)$ may vary from $50$ to $150$ due to manufacturing variations. The maximum emitter current $(\text{in}\: \mu A)$ is ________.