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GATE EC Analog Circuits questions

Practise Analog Circuits questions for GATE EC. Explore official PYQs and original subject-wise quizzes, check answers and view available solutions. Free, no sign-in.

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Official PYQ2016Analog CircuitsOp-amp CircuitsNAT · 2 marks
An ideal opamp has voltage sources V1,V3,V5,…,VN−1V_1, V_3, V_5, \dots, V_{N-1} connected to the non-inverting input and V2,V4,V6,…,VNV_2, V_4, V_6, \dots, V_N connected to the inverting input as shown in the figure below (+VCC=15(+V_{CC}= 15 volt, –VCC=–15– V_{CC} = – 15 volt). The voltages V1,V2,V3,V4,V5,V6,…V_1, V_2, V_3, V_4, V_5, V_6, \dots are 1,−1/2,1/3,−1/4,1/5,−1/6,…1, -1/2, 1/3, -1/4, 1/5, -1/6, \dots volt, …
Official PYQ2016Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
In the circuit shown below, VsV_{s} is a constant voltage source and ILI_{L} is a constant current load. The value of ILI_{L} that maximizes the power absorbed by the constant current load is
Official PYQ2016Analog CircuitsOp-amp CircuitsMCQ · 1 mark
The switch has been in position 11 for a long time and abruptly changes to position 22 at t=0t = 0. If time tt is in seconds, the capacitor voltage VCV_{C} (in volts) for t>0t > 0 is given by
Official PYQ2016Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
The Ebers-Moll model of a BJTBJT is valid
Official PYQ2016Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
A long-channel NMOSNMOS transistor is biased in the linear region with VDS=50V_{DS}=50 mm VV and is used as a resistance. Which one of the following statement is NOTNOT correct?
Official PYQ2016Analog CircuitsBJT and MOSFET AmplifiersMCQ · 1 mark
Which one of the following statements is correct about an ac-coupled common-emitter amplifier operating in the mid-band region?
Official PYQ2016Analog CircuitsBJT and MOSFET AmplifiersNAT · 2 marks
Consider a long-channel NMOSNMOS transistor with source and body connected together. Assume that the electron mobility is independent of VGSV_{GS} and VDS.V_{DS}. Given, gm=0.5μA/V for VDS=50 mV and  VGS=2 Vg_{m}=0.5\mu A/V \text{ for } V_{DS}=50\:mV \text{ and } \: V_{GS}= 2 \: V, gd=8μA/V for VGS=2 V and VDS=0 Vg_{d}=8\mu A/V \text{ for } V_{GS}=2\:V \text{ and }V_{DS}=0 \:V, where …
Official PYQ2016Analog CircuitsOp-amp CircuitsNAT · 2 marks
An opamp has a finite open loop voltage gain of 100100. Its input offset voltage Vios(=+5mV)V_{ios}(=+5mV) is modeled as shown in the circuit below. The amplifier is ideal in all other respects. VinputV_{\text{input}} is 25 mV25 \: mV. The output voltage (in millivolts) is _________
Official PYQ2016Analog CircuitsOp-amp CircuitsNAT · 2 marks
In the feedback system shown below G(s)=1(s2+2s)G\left ( s \right )=\frac{1}{\left ( s^{2}+2s \right )}. The step response of the closed-loop system should have minimum settling time and have no overshoot. The required value of gain kk to achieve this is __________
Official PYQ2016Analog CircuitsOp-amp CircuitsNAT · 2 marks
In the feedback system shown below G(s)=1(s+1)(s+2)(s+3).G\left ( s \right )=\frac{1}{\left ( s+1 \right )\left (s+2 \right )\left ( s+3 \right )}. The positive value of kk for which the gain margin of the loop is exactly 00 dB and the phase margin of the loop is exactly zero degree is _________
Official PYQ2016Analog CircuitsBJT and MOSFET AmplifiersNAT · 1 mark
Consider the circuit shown in the figure. Assuming VEE1=VEE2=0.7V_{EE1} = V_{EE2} = 0.7 volt, the value of the dc voltage VC2V_{C2}(in volt) is _______
Official PYQ2016Analog CircuitsOp-amp CircuitsNAT · 1 mark
In the astable multivibrator circuit shown in the figure, the frequency of oscillation (in kHz) at the output pin 33 is _______
Official PYQ2016Analog CircuitsOp-amp CircuitsNAT · 1 mark
For a superheterodyne receiver, the intermediate frequency is 15 MHz15\ MHz and the local oscillator frequency is 3.5 GHz3.5\ GHz. If the frequency of the received signal is greater than the local oscillator frequency, then the image frequency (in MHzMHz) is _______
Official PYQ2016Analog CircuitsBJT and MOSFET AmplifiersNAT · 2 marks
The injected excess electron concentration profile in the base region of an npnnpn BJT, biased in the active region, is linear, as shown in the figure. If the area of the emitter-base junction is 0.001 cm2,μn=800cm2/(V−s)0.001\:cm^2 ,\mu_n=800cm^2/(V-s) in the base region and depletion layer widths are negligible, then the collector current IcI_c(in mA) at room temperature is …
Official PYQ2016Analog CircuitsBJT and MOSFET AmplifiersMCQ · 2 marks
In the circuit shown in the figure , the channel length modulation of all transistors is non-zero (λ≠0)(\lambda\neq0). Also, all transistors operate in saturation and have negligible body effect .The ac small signal voltage gain (Vo/VinV_o/V_{in}) of the circuit is _________
Official PYQ2015Analog CircuitsDiode CircuitsMCQ · 1 mark
For the circuit with ideal diodes shown in the figure, the shape of the output voutv_{\text{out}} for the given sine wave input vinv_{\text{in}} will be
Official PYQ2015Analog CircuitsBJT and MOSFET AmplifiersNAT · 2 marks
A MOSFET in saturation has a drain current of 11 mA for VDS=0.5 VV_{DS} =0.5 \: V. If the channel length modulation coefficient is 0.05 V−10.05 \: V^{-1}, the output resistance (in kΩk \Omega) of the MOSFET is ___________.
Official PYQ2015Analog CircuitsBJT and MOSFET AmplifiersMCQ · 2 marks
For the NMOSFET in the circuit shown, the threshold voltage is VthV_{th}, where Vth>0V_{th}>0. The source voltage VSSV_{SS} is varied from 00 to VDDV_{DD}. Neglecting the channel length modulation, the drain current IDI_D as a function of VSSV_{SS} is represented by
Official PYQ2015Analog CircuitsOp-amp CircuitsNAT · 2 marks
In the circuit shown, assume that the opamp is ideal. The bridge output voltage V0V_0 (in mV) for δ=0.05\delta=0.05 is __________
Official PYQ2015Analog CircuitsOp-amp CircuitsMCQ · 2 marks
The circuit shown in the figure has an ideal opamp. The oscillation frequency and the condition to sustain the oscillations, respectively, are