GATE EC Analog Circuits questions

A multistage amplifier has a low-pass response with three real poles at $s=-\omega_{1}-\omega_{2}$ and $\omega_{3}$. The approximate overall bandwidth $\mathrm{B}$ of the amplifier will be given by

The emitter coupled pair of $\text{BJT's}$ gives a linear transfer relation between the differential output voltage and the differenital input voltage $\mathrm{V}_{i d }$ only when the magnitude of $V_{i d}$ is less $\alpha$ times the thermal voltage, where $\alpha$ is

In a differential amplifier, $\text{CMRR}$ can be improved by using an increased

The circuit of the figure is an example of feedback of the following type

Two identical $\text{FETs}$, each characterised by the parameters $g_m$ and $r_d$ are connected in parallel. The composite $\text{FET}$ is then characterised by the parameters

The static characteristic of an adequately forward biased $p-n$ junction is a straight line, if the plot is of

The $f_{\mathrm{T}}$ of a $\text{BJT}$ is related to its $g m, \mathrm{C}_\pi$ and $\mathrm{C}_\mu$ as follows

For small signal $a.c$. operation, a practical forward biased diode can be modelled as

The threshold voltage for each transistor in the figure is $2 \mathrm{V}$. For this circuit to work as an inverter, $V_{i}$ must take the values

The voltage $\mathrm{V}$ in the figure is always equal to

The voltage $\mathrm{V}$ in the figure is equal to

In a common emitter $\text{BJT}$ amplifier, the maximum usable supply voltage is limited by

A cascade amplifier stage is equivalent to

In the $\text{BJT}$ amplifier shown in the figure is the transistor is based in the forward active region. Putting a capacitor across $R_E$ will

In the circuit of in the figure is the current $i_{D}$ through the ideal diode (zero cut in voltage and forward resistance) equals

A half wave rectifier uses a diode with a forward resistance $\text{Rf}$. The voltage is $\text{V}_\text{m} \sin \omega t$ and the load resistance is $\text{R}_\text{L}$. The $\text{DC}$ current is given by

The output voltage $V_{0}$ of the circuit shown in the figure is

In the circuit shown in the given figure $\mathrm{N}$ is a finite gain amplifier with a gain of $k$, a very large input impedance, and a very low output impedance. The input impedance of the feedback amplifier with the feedback impedance $\mathrm{Z}$ connected as shown will be

The circuit shown in the figure is that of

A $n$ – channel silicon $\left(E_{g}=1.1 \; \mathrm{eV}\right)$ MOSFET was fabricated using $n+$ poly-silicon gate and the threshold voltage was found to be $1 \mathrm{~V}$. Now, if the gate is changed to $v^{+}$poly-silicon, other things remaining the same, the new threshold voltage should be