GATE EC Analog Circuits questions

The zener diode in the regulator circuit shown in the figure has a Zener voltage of $5.8$ volts and a Zener knee current of $0.5 \mathrm{~mA}$. The maximum load current drawn from this circuit ensuring proper functioning over the input voltage range between $20$ and $30$ volts, is

The transistors used in a portion of the TTL gate shown in the figure have a $\beta=100$. The base-emitter voltage of is $0.7 \mathrm{~V}$ for a transistor in active region and $0.75 \mathrm{~V}$ for a transistor in saturation. If the sink current $I=1 \mathrm{~mA}$ and the output is at logic $0,$ then the current $I_{R}$ will be equal to

Both transistors $\mathrm{T} 1$ and $\mathrm{T} 2$ show in the figure, have a threshold voltage of $1$ Volts. The device parameters $\mathrm{K}_1$ and $\mathrm{K}_2$ of $\mathrm{T} 1$ and $\mathrm{T} 2$ are, respectively, $36 \; \mu \mathrm{A/V}^{2}$ and $9 \; \mu \mathrm{A} / \mathrm{V}^{2}$. The output voltage $V_{0}$ is

A $\text{MOS}$ capacitor made using $p$ type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of

Common Data Questions 78, 79, 80 Given, $r_{d}=20 \; \mathrm{k} \Omega, \mathrm{I}_{\mathrm{DSS}}=10 \mathrm{~mA}, \mathrm{~V}_{p}=-8 \mathrm{~V}$ $Z_1$ and $Z_0$ of the circuit are respectively

Common Data Questions 78, 79, 80 Given, $r_{d}=20 \; \mathrm{k} \Omega, \mathrm{I}_{\mathrm{DSS}}=10 \mathrm{~mA}, \mathrm{~V}_{p}=-8 \mathrm{~V}$ $\mathrm{I}_{\mathrm{D}}$ and $\mathrm{V}_{\mathrm{DS}}$ under $\mathrm{DC}$ conditions are respectively

Common Data Questions 78, 79, 80 Given, $r_{d}=20 \; \mathrm{k} \Omega, \mathrm{I}_{\mathrm{DSS}}=10 \mathrm{~mA}, \mathrm{~V}_{p}=-8 \mathrm{~V}$ Transconductance in milli-Siemens (mS) and voltage gain of the amplifier are respectively

The impurity commonly used for realizing the base region of a silicon $n-p-n$ transistor is

If for a silicon $n-p-n$ transistor, the base-to-emitter voltage $\left(\mathrm{V}_{\mathrm{KE}}\right)$ is $0.7 \mathrm{~V}$ and the collector-to-base voltage $\left(\mathrm{V}_{\text{CB}}\right)$ is $0.2 \mathrm{~V}$, then the transistor is operating in the

Consider the following statements $\mathrm{S} 1$ and $\mathrm{S} 2$. $\text{S1 :}$ The $\beta$ of a bipolar transistor reduces if the base width is increased. $\text{S2 :}$ The $\beta$ of a bipolar transistor increases if the doping concentration in the base is increased. Which one of the following is correct?

An ideal $\text{op-amp}$ is an ideal

Voltage series feedback (also called series-shunt feedback) results in

Assuming $\mathrm{V}_{\text{CEsat }}=0.2 \mathrm{~V}$ and $\beta=50$, the minimum base current $\left(I_{v}\right)$ required to drive the transistor in the given figure to saturation is

The drain of an $n$-channel MOSFET is shorted to the gate so that $V_{G S}=V_{D s}$. The threshold voltage $\left(V_{T}\right)$ of MOSFET is $1 \mathrm{~V}$. If the drain current $\left(\mathrm{I}_{\mathrm{D}}\right)$ is $1 \mathrm{~mA}$ for $\mathrm{V}_{G S}=2 \mathrm{~V}$, then for …

The neutral base width of a bipolar transistor, biased in the active region, is $0.5 \; \mu \mathrm{m}$. The maximum electron concentration and the diffusion constant in the base are $10^{14} / \mathrm{cm}^{3}$ and $\mathrm{D}_{n}$ $=25 \mathrm{~cm}^{2} / \mathrm{sec}$ respectively. Assuming negligible recombination in the base, the collector current …

Assuming that the $\beta$ of the transistor is extremely large and $\text{V}_{\text{B E}}=0.7 \mathrm{~V}, \text{I}_{\text{C}}$ and $\text{V}_{\text{CE}}$ in the circuit shown in the figure are

A bipolar transistor is operating in the active region with a collector current of $1 \mathrm{~mA}$. Assuming that the $\beta$ of the transistor is $100$ and the thermal voltage $\left(\mathrm{V}_{\mathrm{T}}\right)$ is $25 \; \mathrm{mV}$, the transconductance $\left(g_{m}\right)$ and the input resistance $\left(r_{n}\right)$ of the transistor …

In the $\text{op-amp}$ circuit given in the figure, the load current $i_{\text{L}}$ is

In the voltage regulator shown in the given figure, the load current can vary from $100 \mathrm{~mA}$ to $500 \mathrm{~mA}$. Assuming that the Zener diode is ideal (i.e., the Zener knee current is negligibly small and Zener resistance is zero in the breakdown region), the value of $R$ is

In a full-wave rectifier using two ideal diodes, $V_{d i}$ and $V_{i d}$ are the $d c$ and peak values of the voltage respectively across a resistive load. If PIV is the peak inverse voltage of the diode, then the appropriate relationships for this rectifier are