GATE EC 2022 Set 1 Q8 — BJT and MOSFET Amplifiers

Consider the $\text{CMOS}$ circuit shown in the figure (substrates are connected to their respective sources). The gate width $(W)$ to gate length $(L)$ ratios $\left( \frac{W}{L} \right)$ of the transistors are as shown. Both the transistors have the same gate oxide capacitance per unit area. For the $p\text{MOSFET},$ the threshold voltage is $– 1 \; \text{V}$ and the mobility of holes is $40 \; \frac{\text{cm}^{2}}{\text{V.s}}.$  For the $n\text{MOSFET},$ the threshold voltage is $1V$ and the mobility of electrons is $300\dfrac{cm^2}{V.s}$. The steady state output voltage $V_{o}$ is _____________.