Official PYQ · 1992Set 1 · Q1.16BJT and MOSFET AmplifiersMCQ1 mark

GATE EC 1992 Set 1 Q1.16 — BJT and MOSFET Amplifiers

The $\text{JFET}$ in the circuit shown in the given figure has an $\mathrm{I}_{\mathrm{DSS}}=10 \mathrm{~mA}$ and $\mathrm{V}_{\mathrm{p}}=5 \mathrm{~V}$ . The value of the resistance $\mathrm{R}_{\mathrm{s}}$ for a drain current $\mathrm{I}_{\mathrm{DS}}=6.4 \mathrm{~mA}$ is (select the nearest value)

View answer

Answer: A

Worked explanation not available yet.

Free practice · Your answers on this page are not saved.

Published 10 Oct 2026

Report a correction

GATE EC · 2025BJT and MOSFET Amplifiers
A simplified small-signal equivalent circuit of a BJT-based amplifier is given below. The small-signal voltage gain $V_{o} / V_{S}$ (in $\mathrm{V} / \mathrm{V})$ is $\_\_\_\_\_\_$
MCQ · 1 mark
GATE EC · 2025BJT and MOSFET Amplifiers
The ideal BJT in the circuit given below is biased in the active region with a $\beta$ of $100$ . If $I_{B}$ is $10 \: \mu \mathrm{A}$ , then $V_{C E}$ (in Volts, rounded off to two decimal places) is $\_\_\_\_\_\_\_\_$ .
MCQ · 1 mark
GATE EC · 2025BJT and MOSFET Amplifiers
Which of the following statements is/are TRUE with respect to ideal MOSFET-based DC-coupled single-stage amplifiers having finite load resistors?
MSQ · 1 mark
GATE EC · 2025BJT and MOSFET Amplifiers
The identical MOSFETs $M_{1}$ and $M_{2}$ in the circuit given below are ideal and biased in the saturation region. $\mathrm{M}_{1}$ and $\mathrm{M}_{2}$ have a transconductance $g_{m}$ of $5$ mS. The input signals (in Volts) are: $\begin{array}{l} V_{1}=2.5+0.01 \sin \omega t \\ V_{2}=2.5-0.01 \sin \omega t \end{array}$ The output signal …
MCQ · 2 marks
GATE EC · 2025BJT and MOSFET Amplifiers
In the circuit shown, the identical transistors $\text{Q1}$ and $\text{Q2}$ are biased in the active region with $\beta=120$ . The Zener diode is in the breakdown region with $\mathrm{V}_{\mathrm{Z}}=5 \mathrm{~V}$ and $\mathrm{I}_{\mathrm{Z}}=25 \mathrm{~mA}$ . If $\mathrm{I}_{\mathrm{L}}=12 \mathrm{~mA}$ and …
MCQ · 2 marks
GATE EC · 2024BJT and MOSFET Amplifiers
In the circuit below, assume that the long channel $\text{NMOS}$ transistor is biased in saturation. The small signal trans-conductance of the transistor is $g_{m}$ . Neglect body effect, channel length modulation and intrinsic device capacitances. The small signal input impedance $Z_{i n}(j \omega)$ is $\_\_\_\_\_\_$
MCQ · 1 mark

Browse this topic

More BJT and MOSFET Amplifiers questions

GATE EC 1992 Set 1 Q1.16 — BJT and MOSFET Amplifiers

Related questions