GATE EC question library
Practise GATE EC Electronics and Communication previous year questions free. Browse by subject, syllabus topic, year and question type, with answers and available solutions.
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Consider a causal second-order system with the transfer function with a unit-step as an input. Let be the corresponding output. The time taken by the system output to reach of its steady-state value rounded off to two decimal …
The block diagram of a system is illustrated in the figure shown, where is the input and is the output. The transfer function is
Let the state-space representation of an LTI system be where are matrices, is a scalar, is the input to the system, and is its output. Let and .Which one of the following options for and will ensure that the transfer function of this LTI …
A single bit, equally likely to be and , is to be sent across an additive white Gaussian noise (AWGN) channel with power spectral density Binary signaling with and is used for the transmission, along with an optimal receiver that minimizes the bit-error probability. Let …
The quantum efficiency and responsivity at wavelength in a p-i-n photodetector are related by
Two identical copper wires and placed in parallel as shown in the figure, carry currents and , respectively, in opposite directions. If the two wires are separated by a distance of , then the magnitude of the magnetic field between the wires at a distance from is
The dispersion equation of a waveguide, which relates the wavenumber to the frequency is where the speed of light and is a constant . If the group velocity is , then the phase velocity is
In the circuit shown, the breakdown voltage and the maximum current of the Zener diode are and , respectively. The values of and are and respectively. What is the range of that will maintain the Zener diode in the ‘on’ state?
The state transition diagram for the circuit shown is
In the circuits shown the threshold voltage of each transistor is Ignoring the effect of channel length modulation and body bias. the values of and respectively, in volts, are
The circuit shown below has a variable resistance given by the following expression: where and We are also given that and the source voltage is If the current at time is then …
Consider a unity feedback system, as in the figure shown, with an integral compensator and open-loop transfer function where The positive value of for which there are exactly two poles of the unity feedback system on the axis is equal to ________ (rounded off to two decimal …
Consider the homogenous ordinary differential equation with as a general solution. Given that the value of rounded off to two decimal places, is________.
Let be a length – discrete-time finite impulse response filter, given by and is zero for A length – finite impulse response approximation of has to be obtained such that …
Let a random process be described as where is a white noise process with power spectral density W/Hz. The filter has a magnitude response given by for and zero elsewhere. is a stationary random process, uncorrelated with , with …
A voice signal is in the frequency range to . The signal is amplitude-modulated to generated an AM signal where The AM signal is to be digitized and archived. This is done by first sampling at times the Nyquist frequency, and then …
A random variable takes values and with probabilities and , respectively. It is transmitted across a channel which adds noise so that the random variable at the channel output is . The noise is independent of and is uniformly distributed over the interval The receiver makes a …
A Germanium sample of dimensions is illuminated with a laser light source as shown in the figure. The illuminated sample surface has a of loss-less Silicon dioxide layer that reflects one-fourth of the incident light. From the remaining light, one-third of the power is reflected from the Silicon …
In an ideal junction with an ideality factor of at the magnitude of the reverse-bias voltage required to reach of its reverse saturation current, rounded off to decimal places, is ______
Consider a long-channel MOSFET with a channel length and width The device parameters are acceptor concentration electron mobility oxide capacitance/area threshold voltage The drain saturation current …
