GATE EC BJT and MOSFET Amplifiers questions

In the circuit shown below, $V_{s}$ is a constant voltage source and $I_{L}$ is a constant current load. The value of $I_{L}$ that maximizes the power absorbed by the constant current load is

The Ebers-Moll model of a $BJT$ is valid

A long-channel $NMOS$ transistor is biased in the linear region with $V_{DS}=50$ $m$ $V$ and is used as a resistance. Which one of the following statement is $NOT$ correct?

Which one of the following statements is correct about an ac-coupled common-emitter amplifier operating in the mid-band region?

Consider a long-channel $NMOS$ transistor with source and body connected together. Assume that the electron mobility is independent of $V_{GS}$ and $V_{DS}.$ Given, $g_{m}=0.5\mu A/V \text{ for } V_{DS}=50\:mV \text{ and } \: V_{GS}= 2 \: V$, $g_{d}=8\mu A/V \text{ for } V_{GS}=2\:V \text{ and }V_{DS}=0 \:V$, where …

Consider the circuit shown in the figure. Assuming $V_{EE1} = V_{EE2} = 0.7$ volt, the value of the dc voltage $V_{C2}$(in volt) is _______

The injected excess electron concentration profile in the base region of an $npn$ BJT, biased in the active region, is linear, as shown in the figure. If the area of the emitter-base junction is $0.001\:cm^2 ,\mu_n=800cm^2/(V-s)$ in the base region and depletion layer widths are negligible, then the collector current $I_c$(in mA) at room temperature is …

In the circuit shown in the figure , the channel length modulation of all transistors is non-zero $(\lambda\neq0)$. Also, all transistors operate in saturation and have negligible body effect .The ac small signal voltage gain ($V_o/V_{in}$) of the circuit is _________

A MOSFET in saturation has a drain current of $1$ mA for $V_{DS} =0.5 \: V$. If the channel length modulation coefficient is $0.05 \: V^{-1}$, the output resistance (in $k \Omega$) of the MOSFET is ___________.

For the NMOSFET in the circuit shown, the threshold voltage is $V_{th}$, where $V_{th}>0$. The source voltage $V_{SS}$ is varied from $0$ to $V_{DD}$. Neglecting the channel length modulation, the drain current $I_D$ as a function of $V_{SS}$ is represented by

In the circuit shown, $I_1=80$ mA and $I_2=4$ mA. Transistors $T_1$ and $T_2$ are identical. Assume that the thermal voltage $V_T$ is $26$ mV at $27^{\circ}C$. At $50^{\circ}C$, the value of the voltage $V_{12}=V_1 - V_2$ (in mV) is _______.

The $2$-port admittance matrix of the circuit shown is given by

An $LC$ tank circuit consists of an ideal capacitor $C$ connected in parallel with a coil of inductance $L$ having an internal resistance $R.$ The resonant frequency of the tank circuit is

In the ac equivalent circuit shown, the two BJTs are biased in active region and have identical parameters with $\beta \gg 1$. The open circuit small signal voltage gain is approximately _______.

In the circuit shown, the voltage $V_{X}$ (in Volts) is ________.

At very high frequencies, the peak output voltage $V_{0}$ (in Volts) is _______.

Which one of the following processes is preferred to form the gate dielectric $(SiO_{2})$ of MOSFETs ?

If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?

In the circuit shown in the figure, the BJT has a current gain $(\beta)$ of $50.$ For an emitter-base voltage ܸ $V_{EB} = 600\: mV,$ the emitter-collector voltage $V_{EC}$ (in Volts) is _______.

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be $1\: mA$ at a drain-source voltage of $5\: V.$ When the drain-source voltage was increased to $6\: V$ while keeping gate-source voltage same, the drain current increased to $1.02\: mA.$ Assume that drain to source saturation voltage is much smaller than …