GATE EC BJT and MOSFET Amplifiers questions

Assuming $\mathrm{V}_{\text{CEsat }}=0.2 \mathrm{~V}$ and $\beta=50$, the minimum base current $\left(I_{v}\right)$ required to drive the transistor in the given figure to saturation is

The drain of an $n$-channel MOSFET is shorted to the gate so that $V_{G S}=V_{D s}$. The threshold voltage $\left(V_{T}\right)$ of MOSFET is $1 \mathrm{~V}$. If the drain current $\left(\mathrm{I}_{\mathrm{D}}\right)$ is $1 \mathrm{~mA}$ for $\mathrm{V}_{G S}=2 \mathrm{~V}$, then for …

The neutral base width of a bipolar transistor, biased in the active region, is $0.5 \; \mu \mathrm{m}$. The maximum electron concentration and the diffusion constant in the base are $10^{14} / \mathrm{cm}^{3}$ and $\mathrm{D}_{n}$ $=25 \mathrm{~cm}^{2} / \mathrm{sec}$ respectively. Assuming negligible recombination in the base, the collector current …

Assuming that the $\beta$ of the transistor is extremely large and $\text{V}_{\text{B E}}=0.7 \mathrm{~V}, \text{I}_{\text{C}}$ and $\text{V}_{\text{CE}}$ in the circuit shown in the figure are

A bipolar transistor is operating in the active region with a collector current of $1 \mathrm{~mA}$. Assuming that the $\beta$ of the transistor is $100$ and the thermal voltage $\left(\mathrm{V}_{\mathrm{T}}\right)$ is $25 \; \mathrm{mV}$, the transconductance $\left(g_{m}\right)$ and the input resistance $\left(r_{n}\right)$ of the transistor …

For an $n$-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. $V_{SB}>0$ ), the threshold voltage $V_T$ of the MOSFET will

Choose the correct match for input resistance of various amplifier configurations shown below $\begin{array}{ll}\text{ Configuration } & \text{ Input resistance } \\ \text{ CB: Common Base } & \text{ LO: Low } \\ \text{ CC : Common Collector } & \text{ MO: Moderate } \\ \text{ CE : Common Emitter } & \text{ HI : High }\end{array}$

If the differential voltage gain and the common mode voltage gain of a differential amplifier are $48 \mathrm{~dB}$ and $2 \mathrm{~dB}$ respectively, then its common mode rejection ratio is

Generally, the gain of a transistor amplifier falls at high frequencies due to the

When the gate-to-source voltage $\left(\mathrm{V}_{\mathrm{GS}}\right)$ of a MOSFET with threshold voltage of $400 \; \mathrm{mV}$, working in saturation is $900 \; \mathrm{mV}$, the drain current is observed to be $1 \mathrm{~mA}$. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain …

An amplifier without feedback has a voltage gain of $50$, input resistance of $1 \mathrm{~K} \Omega$ and output resistance of $2.5 \mathrm{~K} \Omega$. The input resistance of the current-shunt negative feedback amplifier using the above amplifier with a feedback factor of $0.2$ is

In the amplifier circuit shown in the figure is the values of $R_{1}$ and $R_{2}$ are such that the transistor is operating at $\mathrm{V}_{\mathrm{CE}}=3 \mathrm{~V}$ and $\mathrm{I}_{\mathrm{C}}=1.5 \mathrm{~mA}$ when its $\beta$ is $150.$ For a transistor with $\beta$ of $200,$ the operating point …

Three identical amplifiers with each one having a voltage gain of $50,$ input resistance of $1 \mathrm{~K} \Omega$ and output resistance of $250 \; \Omega$, are cascaded. The open circuit voltage gain of the combined amplifier is

If the transistor in the figure is in saturation, then

In a negative feedback amplifier using voltage-series (i.e. voltage-sampling, series mixing) feedback. ($R_i$ and $R_o$ denote the input and output resistances respectively)

Consider the following statements in connection with the CMOS inverter in the figure is where both the MOSFETs are of enhancement type and both have a thresh old voltage of $2 \mathrm{~V}$. Statement 1: $\mathrm{T}_{1}$ conducts when $\mathrm{V} i \geq 2 \mathrm{~V}$. Statement 2: $T_{1}$ is always in saturation when $\mathrm{V}_{0}=0 \mathrm{~V}$. …

The voltage gain $\mathrm{A}_{u}=\frac{\mathrm{V}_{0}}{\mathrm{~V}_{i}}$ of the JFET amplifier shown in the figure is

The effective channel length of a MOSFET in saturation decreases with increase in

MOSFET can be used as a

The current gain of a BJT is