GATE EC Analog Circuits questions

The common-emitter short-circuit current gain $\beta$ of a transistor

If a transistor is operating with both of its junctions forward biased, but with the collector base forward bias greater than the emitter-base forward bias, then it is operating in the

In the circuit of the given figure, assume that the diodes are ideal and the meter is an average indicating ammeter. The ammeter will read

A Zener diode in the circuit shown in the figure is has a knee current of $5 \mathrm{~mA}$, and a maximum allowed power dissipation of $300 \mathrm{~mW}$. What are the minimum and maximum load currents that can be drawn safely from the circuit, keeping the output voltage $\mathrm{V}_{\mathrm{o}}$ constant at $6 \mathrm{~V}$?

Value of $R$ in the oscillator circuit shown in the given figure, so chosen that it just oscillates at an angular frequency of $\omega$. The value of $\omega$ and the required value of $R$ will respectively be

A Darlington stage is shown in the figure is. If the transconductance of $Q_{1}$ is $g_{m 1}$ and $Q_{2}$ is $g_{m 2}$, then the overall transconductance $g_{m c}\left[\triangleq \frac{i_{c}^{c}}{v_{b c}^{c}}\right]$ is given by

A silicon $n$ $\text{MOSFET}$ has a threshold voltage of $1$ $\mathrm{V}$ and oxide thickness of $\mathrm{AO}$. $\left[\varepsilon_{r}\left(\mathrm{siO}_{2}\right)=3.9, \varepsilon_{\mathrm{o}}=8.854 \times 10^{-14} \mathrm{~F} / \mathrm{cm}\right.$, $\left.q=1.6 \times 10^{-19} \mathrm{C}\right]$ The region under the gate is ion-implanted for …

An $\text{npn}$ transistor has a beta cut-off frequency $f \beta$ of $1 \; \mathrm{MHz}$, and common emitter short circuit low frequency current gain $\beta \mathrm{O}$ of $200$. It unity gain frequency $f \mathrm{T}$ and the alpha cut-off frequency $f \alpha$ respectively are

In a bipolar transistor at room temperature, if the emitter current is doubled the voltage across its base-emitter junction

To obtain very high input and output impedances in a feedback amplifier, the topolomostly used is

The Ebers-Moll model is applicable to

A change in the value of the emitter resistance, $\mathrm{R}_{\mathrm{e}^{\prime}}$ in a difference amplifier

A $\text{BJT}$ is said to be operating in the saturation region if

A zener diode works on the principle of

The break down voltage of a transistor with its base open is $\mathrm{BV}_{\mathrm{CEO}}$ and that with emitter open is $\mathrm{BV}_{\mathrm{CBO}^{‘}}$ then

A class - A transformer coupled, transistor power amplifier is required to deliver a power output of $10$ watts. The maximum power rating of the transistor should not be less than

The threshold voltage of an $n$ channel $\text{MOSFET}$ can be increased by

In a transistor push-pull amplifier

The bandwidth of an $n$-stage tuned amplifier, with each stage having a band width of $B$, is given by

In a multi-stage $\text{R-C}$ coupled amplifier the coupling capacitor