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Official PYQ · 2018

GATE EC 2018 Set 1 Q45 — Combinatorial Circuits

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A junction is made between p−Sip^{-Si} with doping density NA1=1015cm−3N_{A1}=10^{15}cm^{-3} and pSip^{Si} with doping density NA2=1017cm−3.N_{A2}=10^{17}cm^{-3}. Given: Boltzmann constant k=1.38×10−23J⋅K−1,k=1.38\times 10^{-23}J\cdot K^{-1}, electronic charge q=1.6×10−19Cq=1.6\times 10^{-19}C. Assume 100%\text{100}\% acceptor ionization. At room temperature (T=300K),\left ( T=300 K \right ), the magnitude of the built-in potential (in volts, correct to two decimal places) across this junction will be __________.
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Answer: 0.11:0.13

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