A junction is made between p−Si with doping density NA1=1015cm−3 and pSi with doping density NA2=1017cm−3. Given: Boltzmann constant k=1.38×10−23J⋅K−1, electronic charge q=1.6×10−19C. Assume 100% acceptor ionization. At room temperature (T=300K), the magnitude of the built-in potential (in volts, correct to two decimal places) across this junction will be __________.View answerShowHide
Answer: 0.11:0.13
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