Official PYQ · 2016Set 1 · Q33Diode CircuitsNAT2 marks

GATE EC 2016 Set 1 Q33 — Diode Circuits

An AC voltage source $V = 10 \sin(t)$ volts is applied to the following network. Assume that $R_1 = 3 k\Omega$ , $R_2 = 6 k\Omega$ and $R_3 = 9k\Omega$ , and that the diode is ideal.

RMS current $I_{rms}$ (in mA) through the diode is _______

View answer

Answer: 0.9:1.1

Worked explanation not available yet.

Free practice · Your answers on this page are not saved.

Published 10 Oct 2026

Report a correction

GATE EC · 2026Diode Circuits
Consider the ideal diodes $\text{D1}$ and $\text{D2}$ as shown in the Figure with cut-in voltage $V_{\gamma}=0$ Volt and $v_{i}(t)$ is in Volt. The maximum voltage (Volt) of the output $v_{o}(t)$ is $\_\_\_\_$ . (rounded off to two decimal places)
NAT · 2 marks
GATE EC · 2025Diode Circuits
All the diodes in the circuit given below are ideal. Which of the following plots is/are correct when $V_{I}$ (in Volts) is swept from $-M$ to $M$ ?
MSQ · 2 marks
GATE EC · 2025Diode Circuits
The diode in the circuit shown below is ideal. The input voltage (in Volts) is given by $V_{I}=10 \sin 100 \pi t$ , where time $t$ is in seconds. The time duration (in $\mathrm{ms}$ , rounded off to two decimal places) for which the diode is forward biased during one period of the input is $\_\_\_\_$
NAT · 2 marks
GATE EC · 2025Diode Circuits
An ideal p-n junction germanium diode has a reverse saturation current of $10 \mu \mathrm{~A}$ at $300 \: \mathrm{ K}$ . The voltage (in Volts, rounded off to two decimal places) to be applied across the junction to get a forward bias current of $100 \: \mathrm{mA}$ at $300 \: \mathrm{K}$ is $\_\_\_\_\_\_\_$ . (Consider the Boltzmann constant …
NAT · 2 marks
GATE EC · 2024Diode Circuits
In the circuit shown, the $n: 1$ step-down transformer and the diodes are ideal. The diodes have no voltage drop in forward biased condition. If the input voltage (in Volts) is $V_{s}(t)=10 \sin \omega t$ and the average value of load voltage $V_{L}(t)$ (in Volts) is $2.5 / \pi$ , the value of $n$ is $\_\_\_\_\_\_\_$ .
MCQ · 1 mark
GATE EC · 2023Diode Circuits
In the circuit shown below, $D_1$ and $D_2$ are silicon diodes with cut-in voltage of $0.7 \mathrm{~V}$ . $\mathrm{V}_{\mathrm{IN}}$ and $\mathrm{V}_{\mathrm{OUT}}$ are input and output voltages in volts. The transfer characteristic is
MCQ · 2 marks

Browse this topic

More Diode Circuits questions

GATE EC 2016 Set 1 Q33 — Diode Circuits

Related questions