GATE EC 2013 Set 1 Q4 — Diode Circuits

Consider the ideal diodes $\text{D1}$ and $\text{D2}$ as shown in the Figure with cut-in voltage $V_{\gamma}=0$ Volt and $v_{i}(t)$ is in Volt. The maximum voltage (Volt) of the output $v_{o}(t)$ is $\_\_\_\_$ . (rounded off to two decimal places)

All the diodes in the circuit given below are ideal. Which of the following plots is/are correct when $V_{I}$ (in Volts) is swept from $-M$ to $M$?

The diode in the circuit shown below is ideal. The input voltage (in Volts) is given by $V_{I}=10 \sin 100 \pi t$, where time $t$ is in seconds. The time duration (in $\mathrm{ms}$, rounded off to two decimal places) for which the diode is forward biased during one period of the input is $\_\_\_\_$

An ideal p-n junction germanium diode has a reverse saturation current of $10 \mu \mathrm{~A}$ at $300 \: \mathrm{ K}$. The voltage (in Volts, rounded off to two decimal places) to be applied across the junction to get a forward bias current of $100 \: \mathrm{mA}$ at $300 \: \mathrm{K}$ is $\_\_\_\_\_\_\_$. (Consider the Boltzmann constant …

​In the circuit shown, the $n: 1$ step-down transformer and the diodes are ideal. The diodes have no voltage drop in forward biased condition. If the input voltage (in Volts) is $V_{s}(t)=10 \sin \omega t$ and the average value of load voltage $V_{L}(t)$ (in Volts) is $2.5 / \pi$, the value of $n$ is $\_\_\_\_\_\_\_$.

In the circuit shown below, $D_1$ and $D_2$ are silicon diodes with cut-in voltage of $0.7 \mathrm{~V}$. $\mathrm{V}_{\mathrm{IN}}$ and $\mathrm{V}_{\mathrm{OUT}}$ are input and output voltages in volts. The transfer characteristic is