GATE EC question library
Practise GATE EC Electronics and Communication previous year questions free. Browse by subject, syllabus topic, year and question type, with answers and available solutions.
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Which one of the following graphs shows the Shannon capacity (channel capacity) in bits of a memoryless binary symmetric channel with crossover probability ?
Consider the random process Where is a zero-mean Gaussian random variable and V is a random variable uniformly distributed between and . Assume that and are statistically independent. The mean value of the random process at is ________
A sinusoidal message signal is converted to a PCM signal using a uniform quantizer. The required signal-to-quantization noise ratio (SQNR) at the output of the quantizer is dB. The minimum number of bits per sample needed to achieve the desired SQNR is __________
Two conducting spheres and of radii and () respectively, are placed far apart and connected by a long, thin conducting wire, as shown in the figure. For some charge placed on this structure, the potential and surface electric field on are and and that on S2 are and , respectively. …
A two-wire transmission line terminates in a television set. The VSWR measured on the line is . The percentage of power that is reflected from the television set is _________
The values of the integrals and are
An integral over a counterclockwise circle is given by If is defined as , then the value of is
If the vector function is irrotational, then the values of the constants , and , respectively, are
Passengers try repeatedly to get a seat reservation in any train running between two stations until they are successful. If there is chance of getting reservation in any attempt by a passenger, then the average number of attempts that passengers need to make to get a seat reserved is __________
The minimum value of the function in the interval occurs at ________.
The switch in the circuit, shown in the figure, was open for a long time and is closed at . The current (in ampere) at seconds is ____________
Consider the circuit shown in the figure. The Thevenin equivalent resistance (in Ω) across P-Q is _____________
Consider an LTI system with magnitude response and phase response If the input to the system is …
The transfer function of a causal LTI system is . If the input to the system is , where is a unit step function, the system output as is ____________
Consider the parallel combination of two LTI systems shown in the figure. The impulse responses of the systems are If the input is a unit step signal, then the energy of is ____________
A MOS capacitor is fabricated on -type Si (Silicon) where the metal work function is eV and electron affinity of Si is eV. eV, where and are the conduction band minimum and the Fermi energy levels of Si, respectively. Oxide , F/cm, oxide thickness …
For a particular intensity of incident light on a silicon junction solar cell, the photocurrent density is and the open-circuit voltage () is V. Consider thermal voltage () to be mV. If the intensity of the incident light is increased by times, assuming that the temperature remains …
Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double that of T1. Both the transistors are biased in the saturation region of operation, but the gate overdrive voltage () of T2 is double that of T1,where and are the gate-to-source voltage and threshold voltage of the …
An abrupt junction (located at ) is uniformly doped on both and sides. The width of the depletion region is and the electric field variation in the -direction is . Which of the following figures represents the electric field profile near the junction?
Assuming that transistors and are identical and have a threshold voltage of V, the state of transistors and are respectively
