GATE EC question library
Practise GATE EC Electronics and Communication previous year questions free. Browse by subject, syllabus topic, year and question type, with answers and available solutions.
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The current, , through a resistor in series with an inductance, is given by Amperes The value of the current and the power dissipated in the circuit are :
The value of the resistance, , connected across the terminals, and , which will absorb the maximum power, is
If then and are given by [Note : 'L' stands for 'Laplace Transform of']
The value of a rectangular wave of period , having a value of for a duration, and for the duration, , equals
Two inductance coils are connected in series and are also magnetically coupled to each other the coefficient of coupling being . The total inductance of the combination can be
Consider a voltage source connected to a series circuit. When the steady-state reaches, the ratio of the energy stored in the capacitor to the total energy supplied by the voltage source, is equal to
A voltage source is connected across a series circuit. Under steady-state conditions, the applied voltage drops entirely across the
For a dipole antenna
A plane eelctromagnetic wave travelling along – direction, has its electric field given by and . The wave is
For a short wave radio link between two stations via the ionosphere, the ratio of the maximum usable frequency to the critical frequency
Medium wave radio signals may be received at far off distances at night because
Increased pulse-width in the flat-top sampling, leads to
represents
A dynamic consists of
A can be used
The output of a logic gate is ‘’ when all its inputs are at logic ‘’. Then gate is either
Data can be changed from spatial code to temporal code and vice-versa by using
A class - A transformer coupled, transistor power amplifier is required to deliver a power output of watts. The maximum power rating of the transistor should not be less than
The threshold voltage of an channel can be increased by
A small concentration of minority carries is injected into a homogeneous semiconductor crystal at one point. An electric field of is applied across the crystal and this moves the minority carriers a distance of is . The mobility (in volt. sec) will be
