GATE EC question library

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SubjectTopicYearType

The Ebers-Moll model is applicable to

A change in the value of the emitter resistance,

\mathrm{R}_{\mathrm{e}^{\prime}}

in a difference amplifier

The depletion capacitance,

\mathrm{C}_{\mathrm{J}}

, of an abrupt

\mathrm{P}-\mathrm{N}

junction with constant doping on either side varies with reverse bias,

V_{R^{\prime}}

\text{BJT}

is said to be operating in the saturation region if

A zener diode works on the principle of

In a

\text{P}

type silicon sample, the hole concentration is

2.25 \times 10^{15} / \mathrm{cm}^{3}

. If the intrinsic carrier concentration is

1.5 \times 10^{10} / \mathrm{cm}^{3}

, the electron concentration is

The break down voltage of a transistor with its base open is

\mathrm{BV}_{\mathrm{CEO}}

and that with emitter open is

\mathrm{BV}_{\mathrm{CBO}^{‘}}

then

The diffusion potential across a

\text{P-N}

junction

The drift velocity of electrons, in silicon

The probability that an electron in a metal occupies the Fermi-level at any temperature

(>0 \mathrm{~K})

Let

h(t)

be the impulse response of a linear time invariant system. Then the response of the system for any input

u(t)

The solution of

X=A(t) X(t)

, is

Non-minimum phase transfer function is defined as the transfer function.

e^{A t}

can be expanded as

The transfer function of a linear system is the

For a second order system, damping ratio,

(\xi)

0<\xi<1

, then the roots of the characteristic polynomial are

The final value theorem is used to find the

The step error coefficient of a system

\mathrm{G}(\mathrm{s})=\frac{1}{(s+6)(s+1)}

with unity feedback is

Signal flow graph is used to find

The current,

\text{i(t)}

, through a

10 \; \Omega

resistor in series with an inductance, is given by

i(t)=3+4 \sin \left(100 t+45^{\circ}\right)+4 \sin \left(300 t+60^{\circ}\right)

Amperes The

\text{RMS}

value of the current and the power dissipated in the circuit are :