GATE EC question library

In the three dimensional view of a silicon n-channel MOS transistor shown below, $\delta=20\:nm$. The transistor is of width $1\: \mu m$. The depletion width formed at every p-n junction is $10\:nm$. The relative permittivities of $Si$ and $SiO_2$, respectively, are $11.7$ and $3.9$, and $\varepsilon_0=8.9 \times 10^{-12} \: F/m$. The …

An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$. The magnetic field at a distance $r$ from the center of the wire is proportional to

An infinitely long uniform solid wire of radius $a$ carries a uniform dc current of density $\overrightarrow{j}$. A hole of radius $b$ (b < a) ia now drilled along the length of the wire at a distance $d$ from the center of the wire as shown below. The magnetic field inside the hole is

The transfer function of a compensator is given as $$G_c(s)=\frac{s+a}{s+b}$$ $G_c(s)$ is a lead compensator if

The transfer function of a compensator is given as $$G_c(s)=\frac{s+a}{s+b}$$ The phase of the above lead compensator is maximum at