GATE EC 2025 Set 1 Q38 — Electronic Devices

The electron mobility $\mu_{\mathrm{n}}$ in a non-degenerate germanium semiconductor at $300 \: \mathrm{K}$ is $0.38 \mathrm{~m}^{2} / \mathrm{Vs}$.

The electron diffusivity $D_{n}$ at $300 \: \mathrm{K}$ (in $\mathrm{cm}^{2} / \mathrm{s}$, rounded off to the nearest integer) is _________.

(Consider the Boltzmann constant $k_{\mathrm{B}}=1.38 \times 10^{-23} \mathrm{~J} / \mathrm{K}$ and the charge of an electron $e=1.6 \times 10^{-19} \: \mathrm{C}$.)