GATE EC 2023 Set 1 Q46 — Electronic Devices

In an extrinsic semiconductor, the hole concentration is given to be $1.5 n_{i}$ where $n_{i}$ is the intrinsic carrier concentration of $1 \times 10^{10} \mathrm{~cm}^{-3}$. The ratio of electron to hole mobility for equal hole and electron drift current is given as ________ (rounded off to two decimal places).