GATE EC 2017 Set 1 Q38 — Electronic Devices

As shown, two Silicon (Si) abrupt $p-n$ junction diodes are fabricated with uniform donor doping concentrations of $N_{D1}=10^{14} cm^{-3}$ and $N_{D2}=10^{16}cm^{-3}$ in the $n$-regions of the diodes, and uniform acceptor doping concentrations of $N_{A1}=10^{14} cm^{-3}$ and $N_{A2}=10^{16} cm{-3}$  in the $p$-regions of the diodes,respectively. Assuming that the reverse bias voltage is $>>$ built-in potentials of the diodes, the ratio $C_{2}/C_{1}$ of their reverse bias capacitance for the same applied reverse bias, is _________.