Official PYQ · 2016Set 1 · Q51MCQ2 marks

GATE EC 2016 Set 1 Q51 — Electronic Devices

The current density in a medium is given by ${\overrightarrow J= \frac{400 \sin\theta}{2\pi(r^2+4)} \hat {a}_r \: Am^{-2}}$

The total current and the average current density flowing through the portion of a spherical surface $r = 0.8 \: m$ , $\frac{\pi}{12} \leq \theta \leq \frac{\pi}{4}$ , $0 \leq \phi \leq 2\pi$ are given, respectively, by

Marks were awarded to all candidates for this question. It is not scored as a normal quiz.

View answer

Marks to all

Worked explanation not available yet.

Free practice · Your answers on this page are not saved.

Published 10 Oct 2026

Report a correction

GATE EC · 2026
Consider carrier transport in a Zener diode in the breakdown region. Which is the dominant transport mechanism for current flow in this case?
MCQ · 1 mark
GATE EC · 2026
Consider the circuit shown in the Figure with $V_{i}=3 \mathrm{~V}$ and $V_{C C}=12 \mathrm{~V}$ . Assume $V_{B E}=0.7 \mathrm{~V}$ and $\beta_{d c}=99$ for the BJT. Which of the following options is the correct value of the current $\boldsymbol{I}_{\boldsymbol{o}}$ ?
MCQ · 1 mark
GATE EC · 2026
Consider a $\text{p-n}$ junction diode when it is forward biased with $2$ V. Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels, $E_{f n}$ in the $\text{n -side}$ and $E_{f p}$ in the $\text{p -side}?$
MSQ · 1 mark
GATE EC · 2026
Figure shows the output characteristics of two different Bipolar Junction Transistors (BJT), BJT $1$ with magnitude of Early voltage $\left|V_{A 1}\right|$ , and BJT $2$ with magnitude of Early voltage $\left|V_{A 2}\right|$ . Which of the following options is/are correct regarding the Early voltages?
MSQ · 1 mark
GATE EC · 2026
A small signal source, $V_{i}(t)=A \cos \left(10^{5} t\right)+B \sin \left(10^{7} t\right)$ is applied to a BJT circuit as shown in the Figure. Assume zero source resistance, $V_{B E}=0.7 \mathrm{~V}, \beta_{d c}=99$ , Early voltage $=100 \mathrm{~V}$ and Thermal voltage $=25 \mathrm{mV}$ . Effect of internal parasitic capacitances of the BJT may be …
MCQ · 2 marks
GATE EC · 2026
Consider an LED based on a direct bandgap semiconductor material with energy bandgap $1.3$ eV. Given: Plank's constant, $h=6.63 \times 10^{-34} \mathrm{~J} \mathrm{~s}$ and speed of light in free space is $3 \times 10^{8} \mathrm{~m} \mathrm{~s}^{-1}$ . In which of the following wavelength ranges the LED will NOT emit?
MSQ · 2 marks

Browse this subject

More Electronic Devices questions

GATE EC 2016 Set 1 Q51 — Electronic Devices

Related questions