GATE EC 2015 Set 2 Q10 — Electronic Devices

A piece of silicon is doped uniformly with phosphorous with a doping concentration of $10^{16}/cm^{3}.$ The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is $1.6 \times 10^{-19} \:C.$ The conductivity $\text{(in S } cm^{-1})$ of the silicon sample at $300\:K$ is _______.