Official PYQ · 2014Set 2 · Q8MCQ1 mark

GATE EC 2014 Set 2 Q8 — Electronic Devices

A silicon bar is doped with donor impurities $N_{D}= 2.25 \times 10^{15} \text{atoms} / cm^{3}$ . Given the intrinsic carrier concentration of silicon at $T = 300 \: K$ is $n_{i}= 1.5 \times 10^{10} cm^{-3}.$ Assuming complete impurity ionization, the equilibrium electron and hole concentrations are

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Published 10 Oct 2026

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