Official PYQ · 2012Set 1 · Q26MCQ2 marks

GATE EC 2012 Set 1 Q26 — Electronic Devices

The source of a silicon ( $n_i=10^{10}\:per\:cm^3$ ) n-channel MOS transistor has an area of $1\:sq\:\mu m$ and a depth of $1\:\mu m$ . If the dopant density in the source is $10^{19}/cm^3$ , the number of holes in the source region with the above volume is approximately

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Answer: D

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Published 10 Oct 2026

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