GATE EC 2006 Set 1 Q40 — Electronic Devices

A heavily doped $n$-type semiconductor has the following data

• Hole-electron mobility ratio : $0.4$
• Doping concentration : $4.2 \times 10^{8} \; \mathrm{atoms/m}^{3}$
• Intrinsic concentration : $1.5 \times 10^{4} \; \mathrm{atoms/m}^{3}$

The ratio of conductance of the $n$-type semiconductor to that of the intrinsic semiconductor of same material and at the same temperature is given by