Official PYQ · 2004Set 1 · Q41MCQ1 mark

GATE EC 2004 Set 1 Q41 — Electronic Devices

Consider the following statements $\mathrm{S} 1$ and $\mathrm{S} 2$ .

$\mathrm{S} 1 :$ The threshold voltage $\left(V_{T}\right)$ of a MOS capacitor decreases with increase in gate oxide thickness
$\mathrm{S} 2 :$ The threshold voltage $\left(V_{t}\right)$ of a MOS capacitor decreases with increase in substrate doping concentration

Which one of the following is correct?

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Answer: A

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Published 10 Oct 2026

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