GATE EC 1997 Set 1 Q4.6 — Electronic Devices

The intrinsic carrier density at $300 \mathrm{~K}$ is $1.5 \times 10^{10}$ / $\mathrm{cm}^{3}$, in silicon. For $n$-type silicon doped to $2.25 \times$ $10^{15}$ atoms $/ \mathrm{cm}^{3}$, the equilibrium electron and hole densities are