GATE EC 1992 Set 1 Q1.11 — Electronic Devices

A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is $n$-type with $N_{D}=10^{19}$ per $\mathrm{cm}^{3}$. If the excess electron concentration in the steady state is $\Delta n=10^{15}$ per $\mathrm{cm}^{3}$ and if $\tau_{p}=10 \mu \sec$ [minority carrier life time] the generation rate due to irradiation